Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
DENSE COMPOSITE MATERIAL, METHOD FOR PRODUCING THE SAME, JOINED BODY, AND MEMBER FOR SEMICONDUCTOR MANUFACTURING DEVICE
To provide a highly sintered material that has the characteristics of having a coefficient of linear thermal expansion very close to that of alumina and having a sufficiently high thermal conductivity, packing density, and strength.SOLUTION: A dense composite material comprises titanium silicide in the amount of 43 to 63 mass%, and silicon carbide and titanium carbide each in the amount less than the mass percentage of the titanium silicide. The silicon carbide has a maximum interparticle distance of 40 μm or less, a standard deviation of 10 or less, and an open porosity of 1% or less.SELECTED DRAWING: None
【課題】アルミナとの線熱膨張係数差がきわめて小さく、熱伝導率、緻密性及び強度が十分高いという特性を有する、焼結性の高い材料を提供する。【解決手段】本発明の緻密質複合材料は、珪化チタンを４３〜６３質量％含有すると共に、炭化珪素及び炭化チタンをそれぞれ珪化チタンの質量％よりも少量含有し、炭化珪素の粒子間距離の最大値が４０μｍ以下で標準偏差が１０以下であり、開気孔率が１％以下のものである。【選択図】なし
DENSE COMPOSITE MATERIAL, METHOD FOR PRODUCING THE SAME, JOINED BODY, AND MEMBER FOR SEMICONDUCTOR MANUFACTURING DEVICE
To provide a highly sintered material that has the characteristics of having a coefficient of linear thermal expansion very close to that of alumina and having a sufficiently high thermal conductivity, packing density, and strength.SOLUTION: A dense composite material comprises titanium silicide in the amount of 43 to 63 mass%, and silicon carbide and titanium carbide each in the amount less than the mass percentage of the titanium silicide. The silicon carbide has a maximum interparticle distance of 40 μm or less, a standard deviation of 10 or less, and an open porosity of 1% or less.SELECTED DRAWING: None
【課題】アルミナとの線熱膨張係数差がきわめて小さく、熱伝導率、緻密性及び強度が十分高いという特性を有する、焼結性の高い材料を提供する。【解決手段】本発明の緻密質複合材料は、珪化チタンを４３〜６３質量％含有すると共に、炭化珪素及び炭化チタンをそれぞれ珪化チタンの質量％よりも少量含有し、炭化珪素の粒子間距離の最大値が４０μｍ以下で標準偏差が１０以下であり、開気孔率が１％以下のものである。【選択図】なし
DENSE COMPOSITE MATERIAL, METHOD FOR PRODUCING THE SAME, JOINED BODY, AND MEMBER FOR SEMICONDUCTOR MANUFACTURING DEVICE
緻密質複合材料、その製法、接合体及び半導体製造装置用部材
NAGAI ASUMI (Autor:in) / NISHIMURA NOBORU (Autor:in) / YAMAGUCHI HIROFUMI (Autor:in)
10.08.2021
Patent
Elektronische Ressource
Japanisch
| Europäisches Patentamt | 2023
Europäisches Patentamt | 2024
| Europäisches Patentamt | 2021
| Europäisches Patentamt | 2021
Europäisches Patentamt | 2020