Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
DENSE COMPOSITE MATERIAL, METHOD FOR PRODUCING THE SAME, JOINED BODY, AND MEMBER FOR SEMICONDUCTOR MANUFACTURING DEVICE
According to the present invention, a dense composite material includes titanium silicide in an amount of 43 to 63 mass %; silicon carbide in an amount less than the mass percentage of the titanium silicide; and titanium carbide in an amount less than the mass percentage of the titanium silicide. In the dense composite material, a maximum value of interparticle distances of the silicon carbide is 40 μm or less, a standard deviation of the interparticle distances is 10 or less, and an open porosity of the dense composite material is 1% or less.
DENSE COMPOSITE MATERIAL, METHOD FOR PRODUCING THE SAME, JOINED BODY, AND MEMBER FOR SEMICONDUCTOR MANUFACTURING DEVICE
According to the present invention, a dense composite material includes titanium silicide in an amount of 43 to 63 mass %; silicon carbide in an amount less than the mass percentage of the titanium silicide; and titanium carbide in an amount less than the mass percentage of the titanium silicide. In the dense composite material, a maximum value of interparticle distances of the silicon carbide is 40 μm or less, a standard deviation of the interparticle distances is 10 or less, and an open porosity of the dense composite material is 1% or less.
DENSE COMPOSITE MATERIAL, METHOD FOR PRODUCING THE SAME, JOINED BODY, AND MEMBER FOR SEMICONDUCTOR MANUFACTURING DEVICE
NAGAI ASUMI (Autor:in) / NISHIMURA NOBORU (Autor:in) / YAMAGUCHI HIROFUMI (Autor:in)
29.07.2021
Patent
Elektronische Ressource
Englisch
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