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SPUTTERING TARGET, MANUFACTURING METHOD THEREFOR, AND METHOD FOR MANUFACTURING MAGNETIC RECORDING MEDIUM
To provide a sputtering target that has a lowered specific resistance and contains silicon nitride (Si3 N4), a manufacturing method therefor, and a method for manufacturing a magnetic recording medium.SOLUTION: Provided is a sputtering target containing Si3 N4, SiC, MgO, and TiCN, and having a specific resistance of 10 mΩ cm or less.SELECTED DRAWING: None
【課題】比抵抗を低下させた、窒化珪素（Ｓｉ3Ｎ4）を含有するスパッタリングターゲット、その製造方法、及び磁気記録媒体の製造方法の提供。【解決手段】Ｓｉ3Ｎ4、ＳｉＣ、ＭｇＯ、及びＴｉＣＮを含有し、比抵抗が１０ｍΩ・ｃｍ以下であるスパッタリングターゲット。【選択図】なし
SPUTTERING TARGET, MANUFACTURING METHOD THEREFOR, AND METHOD FOR MANUFACTURING MAGNETIC RECORDING MEDIUM
To provide a sputtering target that has a lowered specific resistance and contains silicon nitride (Si3 N4), a manufacturing method therefor, and a method for manufacturing a magnetic recording medium.SOLUTION: Provided is a sputtering target containing Si3 N4, SiC, MgO, and TiCN, and having a specific resistance of 10 mΩ cm or less.SELECTED DRAWING: None
【課題】比抵抗を低下させた、窒化珪素（Ｓｉ3Ｎ4）を含有するスパッタリングターゲット、その製造方法、及び磁気記録媒体の製造方法の提供。【解決手段】Ｓｉ3Ｎ4、ＳｉＣ、ＭｇＯ、及びＴｉＣＮを含有し、比抵抗が１０ｍΩ・ｃｍ以下であるスパッタリングターゲット。【選択図】なし
SPUTTERING TARGET, MANUFACTURING METHOD THEREFOR, AND METHOD FOR MANUFACTURING MAGNETIC RECORDING MEDIUM
スパッタリングターゲット、その製造方法、及び磁気記録媒体の製造方法
IWABUCHI YASUYUKI (Autor:in)
15.03.2022
Patent
Elektronische Ressource
Japanisch
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