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Sputtering Target, Manufacturing Method Therefor, And Manufacturing Method For Magnetic Recording Medium
A sputtering target containing silicon nitride (Si3N4) with reduced specific resistance of is provided. A sputtering target including Si3N4, SiC, MgO and TiCN, wherein a specific resistance of the sputtering target is 10 mΩ·cm or less.
Sputtering Target, Manufacturing Method Therefor, And Manufacturing Method For Magnetic Recording Medium
A sputtering target containing silicon nitride (Si3N4) with reduced specific resistance of is provided. A sputtering target including Si3N4, SiC, MgO and TiCN, wherein a specific resistance of the sputtering target is 10 mΩ·cm or less.
Sputtering Target, Manufacturing Method Therefor, And Manufacturing Method For Magnetic Recording Medium
IWABUCHI YASUYUKI (Autor:in)
31.08.2023
Patent
Elektronische Ressource
Englisch
IPC:
C23C
Beschichten metallischer Werkstoffe
,
COATING METALLIC MATERIAL
/
C04B
Kalk
,
LIME
/
G11B
Informationsspeicherung mit Relativbewegung zwischen Aufzeichnungsträger und Wandler
,
INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
/
H01J
Elektrische Entladungsröhren oder Entladungslampen
,
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
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