Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
SILICON NITRIDE SINTERED BODY
To provide a silicon nitride sintered body of which warpage can be small, and which makes possible to attain a sufficient heat dissipation effect even when a product in which the sintered body is used as a circuit board, a heat-dissipating member, or the like is exposed to a high-temperature environment exceeding 100°C.SOLUTION: A plate-shaped sintered silicon nitride body with a warpage of 0.2% or less, measured before 1 minute after it was held at 120°C for 1 hour or longer in a state placed on a flat sample stage at 25°C, the warpage being calculated as the ratio of (a) the difference between (a') the height of the highest point of the upper surface of the silicon nitride sintered body from the sample table and (a") the height of the lowest point of its upper surface from the sample table to (b) the maximum cross-sectional length of the silicon nitride sintered body.SELECTED DRAWING: Figure 4
【課題】窒化ケイ素焼結体が回路基板、放熱部材等として使用された製品が１００℃を越えるような高温環境にさらされても、窒化ケイ素焼結体の反りが小さく、十分な放熱効果が得られるようにする。【解決手段】板状の窒化ケイ素焼結体を１２０℃で１時間以上保持してから２５℃の平坦な試料台に載せて１分経過する以前に測定した、窒化ケイ素焼結体の上面の最高点の試料台からの高さと最低点の試料台からの高さとの差の、窒化ケイ素焼結体の最大横断長さに対する割合として算出される反りが０．２％以下である。【選択図】図４
SILICON NITRIDE SINTERED BODY
To provide a silicon nitride sintered body of which warpage can be small, and which makes possible to attain a sufficient heat dissipation effect even when a product in which the sintered body is used as a circuit board, a heat-dissipating member, or the like is exposed to a high-temperature environment exceeding 100°C.SOLUTION: A plate-shaped sintered silicon nitride body with a warpage of 0.2% or less, measured before 1 minute after it was held at 120°C for 1 hour or longer in a state placed on a flat sample stage at 25°C, the warpage being calculated as the ratio of (a) the difference between (a') the height of the highest point of the upper surface of the silicon nitride sintered body from the sample table and (a") the height of the lowest point of its upper surface from the sample table to (b) the maximum cross-sectional length of the silicon nitride sintered body.SELECTED DRAWING: Figure 4
【課題】窒化ケイ素焼結体が回路基板、放熱部材等として使用された製品が１００℃を越えるような高温環境にさらされても、窒化ケイ素焼結体の反りが小さく、十分な放熱効果が得られるようにする。【解決手段】板状の窒化ケイ素焼結体を１２０℃で１時間以上保持してから２５℃の平坦な試料台に載せて１分経過する以前に測定した、窒化ケイ素焼結体の上面の最高点の試料台からの高さと最低点の試料台からの高さとの差の、窒化ケイ素焼結体の最大横断長さに対する割合として算出される反りが０．２％以下である。【選択図】図４
SILICON NITRIDE SINTERED BODY
窒化ケイ素焼結体
MATSUMOTO OSAMU (Autor:in) / TAKAHASHI MITSUTAKA (Autor:in)
02.11.2022
Patent
Elektronische Ressource
Japanisch
SILICON NITRIDE SINTERED BODY AND METHOD FOR PRODUCING SILICON NITRIDE SINTERED BODY
| Europäisches Patentamt | 2024