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COPPER/CERAMIC JOINED BODY, AND INSULATED CIRCUIT BOARD
To provide a copper/ceramic joined body that can suppress the occurrence of crack in the ceramic member even when a severe thermal cycle is applied, and has excellent thermal cycle reliability.SOLUTION: Provided is a copper/ceramic joined body 10 which is formed by joining copper members 12 and 13 made of copper or a copper alloy, and a ceramic member 11, and in which, at a joint interface between the ceramic member 11 and the copper members 12, 13, an active metal compound layer 21 is formed on the ceramic member 11 side, and an active metal diffusion region 23 is formed on the ceramic member 11 side of the copper members 12, 13, a maximum reaching distance LA of an active metal diffusion region 23A in the peripheral region A from an active metal compound layer 21A and a maximum reaching distance LB of an active metal diffusion region 23B in the central region B from an active metal compound layer 21B are within the range of 20 μm or more and 80 μm or less, and a difference between the maximum reaching distance LA and the maximum reaching distance LB is 10 μm or less.SELECTED DRAWING: Figure 2
【課題】厳しい冷熱サイクルを負荷した場合であっても、セラミックス部材における割れの発生を抑制でき、冷熱サイクル信頼性に優れた銅/セラミックス接合体を提供する。【解決手段】銅又は銅合金からなる銅部材12,13と、セラミックス部材11とが接合されてなる銅/セラミックス接合体10であって、セラミックス部材11と銅部材12,13との接合界面において、セラミックス部材11側には活性金属化合物層21が形成され、銅部材12,13のうちセラミックス部材11側には活性金属拡散領域23が形成されており、周縁部領域Aにおける活性金属拡散領域23Aの活性金属化合物層21Aからの最大到達距離LAおよび中央部領域Bにおける活性金属拡散領域23Bの活性金属化合物層21Bからの最大到達距離LBが20μm以上80μm以下の範囲内とされ、前記最大到達距離LAと前記最大到達距離LBとの差が10μm以下である。【選択図】図2
COPPER/CERAMIC JOINED BODY, AND INSULATED CIRCUIT BOARD
To provide a copper/ceramic joined body that can suppress the occurrence of crack in the ceramic member even when a severe thermal cycle is applied, and has excellent thermal cycle reliability.SOLUTION: Provided is a copper/ceramic joined body 10 which is formed by joining copper members 12 and 13 made of copper or a copper alloy, and a ceramic member 11, and in which, at a joint interface between the ceramic member 11 and the copper members 12, 13, an active metal compound layer 21 is formed on the ceramic member 11 side, and an active metal diffusion region 23 is formed on the ceramic member 11 side of the copper members 12, 13, a maximum reaching distance LA of an active metal diffusion region 23A in the peripheral region A from an active metal compound layer 21A and a maximum reaching distance LB of an active metal diffusion region 23B in the central region B from an active metal compound layer 21B are within the range of 20 μm or more and 80 μm or less, and a difference between the maximum reaching distance LA and the maximum reaching distance LB is 10 μm or less.SELECTED DRAWING: Figure 2
【課題】厳しい冷熱サイクルを負荷した場合であっても、セラミックス部材における割れの発生を抑制でき、冷熱サイクル信頼性に優れた銅/セラミックス接合体を提供する。【解決手段】銅又は銅合金からなる銅部材12,13と、セラミックス部材11とが接合されてなる銅/セラミックス接合体10であって、セラミックス部材11と銅部材12,13との接合界面において、セラミックス部材11側には活性金属化合物層21が形成され、銅部材12,13のうちセラミックス部材11側には活性金属拡散領域23が形成されており、周縁部領域Aにおける活性金属拡散領域23Aの活性金属化合物層21Aからの最大到達距離LAおよび中央部領域Bにおける活性金属拡散領域23Bの活性金属化合物層21Bからの最大到達距離LBが20μm以上80μm以下の範囲内とされ、前記最大到達距離LAと前記最大到達距離LBとの差が10μm以下である。【選択図】図2
COPPER/CERAMIC JOINED BODY, AND INSULATED CIRCUIT BOARD
銅/セラミックス接合体、および、絶縁回路基板
TERASAKI NOBUYUKI (Autor:in)
26.01.2023
Patent
Elektronische Ressource
Japanisch
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