SINTERED ALUMINUM NITRIDE SUBSTRATE, METHOD FOR PRODUCING THE SAME, AND INSULATED BOARD FOR ELECTRONIC CIRCUIT: Fid-Bau Portal

SINTERED ALUMINUM NITRIDE SUBSTRATE, METHOD FOR PRODUCING THE SAME, AND INSULATED BOARD FOR ELECTRONIC CIRCUIT

YAMAMOTO YASUYUKI / ISHIKAWA MASAKI / OSANAI HIDEYO / YUKI MASAYA

To improve partial discharge resistance of an insulated board for an electronic circuit by using a sintered aluminum nitride substrate.SOLUTION: A sintered aluminum nitride substrate is made of a sintered structure in which boron nitride particles are scattered in a sintered body of aluminum nitride particles, wherein: an area ratio of a region in which a surface of boron nitride particles appears in a reflection electron image observed on a fractured surface of the sintered structure is 1.0 to 5.0%; and when an interior of a contour of one region in which the surface of boron nitride particles appears is called one BN domain, an average aspect ratio, which is an average value of the long diameter/short diameter of the BN domain, is 6.0 or less.SELECTED DRAWING: Figure 4

【課題】窒化アルミニウム焼結基板を用いた電子回路用絶縁基板の耐部分放電性を向上させる。【解決手段】窒化アルミニウム粒子の焼結体の中に、窒化ホウ素粒子が散在している焼結構造体からなり、前記焼結構造体の破断面を観察した反射電子像において、窒化ホウ素粒子の表面が現れている領域の面積率が１.０～５.０％であり、窒化ホウ素粒子の表面が現れている１つの領域の輪郭の内部を１つのＢＮドメインと言うとき、ＢＮドメインの長径／短径の平均値である平均アスペクト比が６.０以下である、窒化アルミニウム焼結基板。【選択図】図４

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