Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
PYROLYTIC BORON NITRIDE-CONTAINING SUBSTRATE, AND INSULATION SUBSTRATE OF SEMICONDUCTOR DEVICE
To provide a pyrolytic boron nitride-containing substrate for a power module that achieves a thinner insulator layer and excellent insulation properties.SOLUTION: A pyrolytic boron nitride-containing substrate is an insulation substrate used as a heat radiation material of a semiconductor device and is mainly composed of pyrolytic boron nitride. It is preferable that the inside of the pyrolytic boron nitride-containing substrate includes pyrolytic carbon layers in a range of one layer or more to 10 layers or less. It is preferable that the pyrolytic carbon layers are mainly composed of carbon and contain boron in a concentration ranging from 0.1% or more to 45% or less by weight. It is preferable that the thickness of each of the pyrolytic carbon layers is 0.1 μm or more and 100 μm or less.SELECTED DRAWING: Figure 1
【課題】絶縁層の薄膜化および絶縁性に優れたパワーモジュール用熱分解窒化ホウ素含有基板を提供する。【解決手段】熱分解窒化ホウ素含有基板は、半導体デバイスの放熱材料として使用される絶縁基板であって、主成分が熱分解窒化ホウ素であることを特徴とする。熱分解窒化ホウ素含有基板の内部には、熱分解炭素層が１層以上、１０層以下の範囲で含まれることが好ましい。また、熱分解炭素層は炭素を主成分としたものであって、ボロンを重量比率０．１％以上４５％以下の範囲の濃度で含むことが好ましい。熱分解炭素層の各層の厚みは０．１μｍ以上、１００μｍ以下であることが好ましい。【選択図】図１
PYROLYTIC BORON NITRIDE-CONTAINING SUBSTRATE, AND INSULATION SUBSTRATE OF SEMICONDUCTOR DEVICE
To provide a pyrolytic boron nitride-containing substrate for a power module that achieves a thinner insulator layer and excellent insulation properties.SOLUTION: A pyrolytic boron nitride-containing substrate is an insulation substrate used as a heat radiation material of a semiconductor device and is mainly composed of pyrolytic boron nitride. It is preferable that the inside of the pyrolytic boron nitride-containing substrate includes pyrolytic carbon layers in a range of one layer or more to 10 layers or less. It is preferable that the pyrolytic carbon layers are mainly composed of carbon and contain boron in a concentration ranging from 0.1% or more to 45% or less by weight. It is preferable that the thickness of each of the pyrolytic carbon layers is 0.1 μm or more and 100 μm or less.SELECTED DRAWING: Figure 1
【課題】絶縁層の薄膜化および絶縁性に優れたパワーモジュール用熱分解窒化ホウ素含有基板を提供する。【解決手段】熱分解窒化ホウ素含有基板は、半導体デバイスの放熱材料として使用される絶縁基板であって、主成分が熱分解窒化ホウ素であることを特徴とする。熱分解窒化ホウ素含有基板の内部には、熱分解炭素層が１層以上、１０層以下の範囲で含まれることが好ましい。また、熱分解炭素層は炭素を主成分としたものであって、ボロンを重量比率０．１％以上４５％以下の範囲の濃度で含むことが好ましい。熱分解炭素層の各層の厚みは０．１μｍ以上、１００μｍ以下であることが好ましい。【選択図】図１
PYROLYTIC BORON NITRIDE-CONTAINING SUBSTRATE, AND INSULATION SUBSTRATE OF SEMICONDUCTOR DEVICE
熱分解窒化ホウ素含有基板、および半導体デバイスの絶縁基板
HIRATE AKIHIRO (Autor:in) / KANO MASAKI (Autor:in)
31.10.2024
Patent
Elektronische Ressource
Japanisch
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