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    COMPOSITION FOR FERROELECTRIC THIN FILM FORMATION METHOD FOR FERROELECTRIC THIN FILM FORMATION AND FERROELECTRIC THIN FILM FORMED BY THE METHOD

    PLZT, PZT 및 PT 로 이루어지는 군에서 선택된 1 종의 강유전체 박막을 형성하기 위한, 본 발명의 강유전체 박막 형성용 조성물은, 일반식 (1) : (PbLa)(ZrTi)O(식 (1) 중 0.9 ＜ x ＜ 1.3, 0y ＜ 0.1, 0z ＜ 0.9) 로 나타내는 복합 금속 산화물 A 에, 복합 산화물 B 또는 일반식 (2) CHCOOH (단, 3n7) 로 나타내는 카르복실산 B 가 혼합된 혼합 복합 금속 산화물의 형태를 취하는 박막을 형성하기 위한 액상 조성물이며, 복합 산화물 B 는, Si, Ce 및 Bi 의 군에서 선택되는 1 종 또는 2 종 이상, Sn, Sm, Nd 및 Y (이트륨) 의 군에서 선택되는 1 종 또는 2 종 이상을 함유하고 있다.

    Disclosed is a composition for ferroelectric thin film formation which is used in the formation of a ferroelectric thin film of one material selected from the group consisting of PLZT, PZT, and PT. The composition for ferroelectric thin film formation is a liquid composition for the formation of a thin film of a mixed composite metal oxide formed of a mixture of a composite metal oxide (A) represented by general formula (1): (Pb x La y )(Zr z Ti (1-z) )O 3 [wherein 0.9 < x < 1.3, 0 ¤y < 0.1, and 0 ¤z < 0.9 are satisfied] with a composite oxide (B). The composite oxide (B) includes one or more elements selected from the group consisting of Si and Bi.

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    COMPOSITION FOR FERROELECTRIC THIN FILM FORMATION METHOD FOR FERROELECTRIC THIN FILM FORMATION AND FERROELECTRIC THIN FILM FORMED BY THE METHOD

    PLZT, PZT 및 PT 로 이루어지는 군에서 선택된 1 종의 강유전체 박막을 형성하기 위한, 본 발명의 강유전체 박막 형성용 조성물은, 일반식 (1) : (PbLa)(ZrTi)O(식 (1) 중 0.9 ＜ x ＜ 1.3, 0y ＜ 0.1, 0z ＜ 0.9) 로 나타내는 복합 금속 산화물 A 에, 복합 산화물 B 또는 일반식 (2) CHCOOH (단, 3n7) 로 나타내는 카르복실산 B 가 혼합된 혼합 복합 금속 산화물의 형태를 취하는 박막을 형성하기 위한 액상 조성물이며, 복합 산화물 B 는, Si, Ce 및 Bi 의 군에서 선택되는 1 종 또는 2 종 이상, Sn, Sm, Nd 및 Y (이트륨) 의 군에서 선택되는 1 종 또는 2 종 이상을 함유하고 있다.

    Disclosed is a composition for ferroelectric thin film formation which is used in the formation of a ferroelectric thin film of one material selected from the group consisting of PLZT, PZT, and PT. The composition for ferroelectric thin film formation is a liquid composition for the formation of a thin film of a mixed composite metal oxide formed of a mixture of a composite metal oxide (A) represented by general formula (1): (Pb x La y )(Zr z Ti (1-z) )O 3 [wherein 0.9 < x < 1.3, 0 ¤y < 0.1, and 0 ¤z < 0.9 are satisfied] with a composite oxide (B). The composite oxide (B) includes one or more elements selected from the group consisting of Si and Bi.

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    COMPOSITION FOR FERROELECTRIC THIN FILM FORMATION METHOD FOR FERROELECTRIC THIN FILM FORMATION AND FERROELECTRIC THIN FILM FORMED BY THE METHOD

    PLZT, PZT 및 PT 로 이루어지는 군에서 선택된 1 종의 강유전체 박막을 형성하기 위한, 본 발명의 강유전체 박막 형성용 조성물은, 일반식 (1) : (PbLa)(ZrTi)O(식 (1) 중 0.9 ＜ x ＜ 1.3, 0y ＜ 0.1, 0z ＜ 0.9) 로 나타내는 복합 금속 산화물 A 에, 복합 산화물 B 또는 일반식 (2) CHCOOH (단, 3n7) 로 나타내는 카르복실산 B 가 혼합된 혼합 복합 금속 산화물의 형태를 취하는 박막을 형성하기 위한 액상 조성물이며, 복합 산화물 B 는, Si, Ce 및 Bi 의 군에서 선택되는 1 종 또는 2 종 이상, Sn, Sm, Nd 및 Y (이트륨) 의 군에서 선택되는 1 종 또는 2 종 이상을 함유하고 있다.

    Disclosed is a composition for ferroelectric thin film formation which is used in the formation of a ferroelectric thin film of one material selected from the group consisting of PLZT, PZT, and PT. The composition for ferroelectric thin film formation is a liquid composition for the formation of a thin film of a mixed composite metal oxide formed of a mixture of a composite metal oxide (A) represented by general formula (1): (Pb x La y )(Zr z Ti (1-z) )O 3 [wherein 0.9 < x < 1.3, 0 ¤y < 0.1, and 0 ¤z < 0.9 are satisfied] with a composite oxide (B). The composite oxide (B) includes one or more elements selected from the group consisting of Si and Bi.

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    Titel:

    COMPOSITION FOR FERROELECTRIC THIN FILM FORMATION METHOD FOR FERROELECTRIC THIN FILM FORMATION AND FERROELECTRIC THIN FILM FORMED BY THE METHOD

    Weitere Titelangaben:

    강유전체 박막 형성용 조성물, 강유전체 박막의 형성 방법 그리고 그 방법에 의해 형성된 강유전체 박막

    Erscheinungsdatum:

    02.11.2015

    Medientyp:

    Patent

    Format:

    Elektronische Ressource

    Sprache:

    Koreanisch

    Klassifikation:

    IPC:  C01G Verbindungen der von den Unterklassen C01D oder C01F nicht umfassten Metalle , COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F / C04B Kalk , LIME / H01L Halbleiterbauelemente , SEMICONDUCTOR DEVICES

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