Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Composition for ferroelectric thin film formation, method for forming ferroelectric thin film, and ferroelectric thin film formed by the method thereof
Disclosed is a composition for ferroelectric thin film formation which is used in the formation of a ferroelectric thin film of one material selected from the group consisting of PLZT, PZT, and PT. The composition for ferroelectric thin film formation is a liquid composition for the formation of a thin film of a mixed composite metal oxide formed of a mixture of a composite metal oxide (A) represented by general formula (1): (PbxLay)(ZrzTi(1-z))O3 [wherein 0.9<0.1, and 0≦z<0.9 are satisfied] with a composite oxide (B) or a carboxylic acid (B) represented by general formula (2): CnH2n+1COOH [wherein 3≦n≦7 is satisfied]. The composite oxide (B) contains one or at least two elements selected from the group consisting of P (phosphorus), Si, Ce, and Bi and one or at least two elements selected from the group consisting of Sn, Sm, Nd, and Y (yttrium).
Composition for ferroelectric thin film formation, method for forming ferroelectric thin film, and ferroelectric thin film formed by the method thereof
Disclosed is a composition for ferroelectric thin film formation which is used in the formation of a ferroelectric thin film of one material selected from the group consisting of PLZT, PZT, and PT. The composition for ferroelectric thin film formation is a liquid composition for the formation of a thin film of a mixed composite metal oxide formed of a mixture of a composite metal oxide (A) represented by general formula (1): (PbxLay)(ZrzTi(1-z))O3 [wherein 0.9<0.1, and 0≦z<0.9 are satisfied] with a composite oxide (B) or a carboxylic acid (B) represented by general formula (2): CnH2n+1COOH [wherein 3≦n≦7 is satisfied]. The composite oxide (B) contains one or at least two elements selected from the group consisting of P (phosphorus), Si, Ce, and Bi and one or at least two elements selected from the group consisting of Sn, Sm, Nd, and Y (yttrium).
Composition for ferroelectric thin film formation, method for forming ferroelectric thin film, and ferroelectric thin film formed by the method thereof
FUJII JUN (Autor:in) / SAKURAI HIDEAKI (Autor:in) / NOGUCHI TAKASHI (Autor:in) / SOYAMA NOBUYUKI (Autor:in)
22.11.2016
Patent
Elektronische Ressource
Englisch
IPC:
H01L
Halbleiterbauelemente
,
SEMICONDUCTOR DEVICES
/
B05D
PROCESSES FOR APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TO SURFACES, IN GENERAL
,
Verfahren zum Aufbringen von Flüssigkeiten oder von anderen fließfähigen Stoffen auf Oberflächen allgemein
/
C01G
Verbindungen der von den Unterklassen C01D oder C01F nicht umfassten Metalle
,
COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
/
C04B
Kalk
,
LIME
/
C23C
Beschichten metallischer Werkstoffe
,
COATING METALLIC MATERIAL
/
H01B
CABLES
,
Kabel
/
H01G
Kondensatoren
,
CAPACITORS
| Europäisches Patentamt | 2018
| Europäisches Patentamt | 2017
Europäisches Patentamt | 2015
Composition for ferroelectric thin film formation and method for forming ferroelectric thin film
| Europäisches Patentamt | 2016