Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
OXIDE SINTERED COMPACT OXIDE SPUTTERING TARGET AND OXIDE THIN FILM
아연 (Zn), 갈륨 (Ga), 실리콘 (Si) 및 산소 (O) 로 이루어지고, Zn 함유량이 ZnO 환산으로 5 ∼ 60 ㏖％, Ga 함유량이 GaO환산으로 8.5 ∼ 90 ㏖％, Si 함유량이 SiO환산으로 0 ∼ 45 ㏖％ 이고, ZnO 환산의 Zn 함유량을 A (㏖％), GaO환산의 Ga 함유량을 B (㏖％), SiO환산의 Si 함유량을 C (㏖％) 로 했을 때, A ≤ (B ＋ 2C) 의 조건을 만족하며, 또한, 상대 밀도가 90 ％ 이상인 것을 특징으로 하는 소결체. DC 스퍼터링에 의한 성막시에 분위기 중에 산소를 도입하지 않아도, 고투과율이며 또한 저굴절률인 아모르퍼스막을 효율적으로 얻는 것을 과제로 한다.
A sintered compact essentially consisting of zinc (Zn), gallium (Ga), silicon (Si) and oxygen (O), wherein a Zn content expressed in terms of ZnO is 5 to 60 mol%, a Ga content expressed in terms of Ga 2 O 3 is 8.5 to 90 mol%, and a Si content expressed in terms of SiO 2 is 0 to 45 mol%, and the sintered compact satisfies a condition of A ¤ (B + 2C) when the Zn content expressed in terms of ZnO is A (mol%), the Ga content expressed in terms of Ga 2 O 3 is B (mol%), and the Si content expressed in terms of SiO 2 is C (mol%), and has a relative density of 90% or higher. An object of this invention is to efficiently obtain an amorphous film having high transmissivity and a low refractive index without having to introduce oxygen into the atmosphere during film deposition by DC sputtering.
OXIDE SINTERED COMPACT OXIDE SPUTTERING TARGET AND OXIDE THIN FILM
아연 (Zn), 갈륨 (Ga), 실리콘 (Si) 및 산소 (O) 로 이루어지고, Zn 함유량이 ZnO 환산으로 5 ∼ 60 ㏖％, Ga 함유량이 GaO환산으로 8.5 ∼ 90 ㏖％, Si 함유량이 SiO환산으로 0 ∼ 45 ㏖％ 이고, ZnO 환산의 Zn 함유량을 A (㏖％), GaO환산의 Ga 함유량을 B (㏖％), SiO환산의 Si 함유량을 C (㏖％) 로 했을 때, A ≤ (B ＋ 2C) 의 조건을 만족하며, 또한, 상대 밀도가 90 ％ 이상인 것을 특징으로 하는 소결체. DC 스퍼터링에 의한 성막시에 분위기 중에 산소를 도입하지 않아도, 고투과율이며 또한 저굴절률인 아모르퍼스막을 효율적으로 얻는 것을 과제로 한다.
A sintered compact essentially consisting of zinc (Zn), gallium (Ga), silicon (Si) and oxygen (O), wherein a Zn content expressed in terms of ZnO is 5 to 60 mol%, a Ga content expressed in terms of Ga 2 O 3 is 8.5 to 90 mol%, and a Si content expressed in terms of SiO 2 is 0 to 45 mol%, and the sintered compact satisfies a condition of A ¤ (B + 2C) when the Zn content expressed in terms of ZnO is A (mol%), the Ga content expressed in terms of Ga 2 O 3 is B (mol%), and the Si content expressed in terms of SiO 2 is C (mol%), and has a relative density of 90% or higher. An object of this invention is to efficiently obtain an amorphous film having high transmissivity and a low refractive index without having to introduce oxygen into the atmosphere during film deposition by DC sputtering.
OXIDE SINTERED COMPACT OXIDE SPUTTERING TARGET AND OXIDE THIN FILM
산화물 소결체, 산화물 스퍼터링 타깃 및 산화물 박막
16.07.2019
Patent
Elektronische Ressource
Koreanisch
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