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COMPOUND FOR TRANSPARENT ELECTROCONDUCTIVE THIN FILM, METHOD FOR FORMING THIN FILM USING THE SAME

LEE YOUNG JOO / KIM JU YOUNG / OH YOON SUK / YANG HEOK

According to an embodiment, disclosed are a transparent conductive thin film composition, and a method for forming a transparent conductive thin film using the composition. The transparent conductive thin film composition comprises indium (In), gallium (Ga), germanium (Ge), zinc (Zn), and oxygen (O2), wherein the number of In, Ga, Ge and Zn elements satisfies the condition: 25 <= (In+Ga)/(In+Ga+Ge+Zn) <= 70.

본 발명에 따른 실시예에서는 투명도전성 박막 조성물 및 이를 이용한 투명도전성 박막 형성방법이 개시된다. 투명도전성 박막 조성물은 인듐(In), 갈륨(Ga), 게르마늄(Ge), 아연(Zn) 및 산소(O2)를 포함하되, 상기 인듐, 갈륨, 게르마늄 및 아연의 원자수의 비가 하기 식을 만족한다. 25 ≤ (In+Ga)/(In+Ga+Ge+Zn) ≤ 70

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COMPOUND FOR TRANSPARENT ELECTROCONDUCTIVE THIN FILM, METHOD FOR FORMING THIN FILM USING THE SAME

LEE YOUNG JOO / KIM JU YOUNG / OH YOON SUK / YANG HEOK

According to an embodiment, disclosed are a transparent conductive thin film composition, and a method for forming a transparent conductive thin film using the composition. The transparent conductive thin film composition comprises indium (In), gallium (Ga), germanium (Ge), zinc (Zn), and oxygen (O2), wherein the number of In, Ga, Ge and Zn elements satisfies the condition: 25 <= (In+Ga)/(In+Ga+Ge+Zn) <= 70.

본 발명에 따른 실시예에서는 투명도전성 박막 조성물 및 이를 이용한 투명도전성 박막 형성방법이 개시된다. 투명도전성 박막 조성물은 인듐(In), 갈륨(Ga), 게르마늄(Ge), 아연(Zn) 및 산소(O2)를 포함하되, 상기 인듐, 갈륨, 게르마늄 및 아연의 원자수의 비가 하기 식을 만족한다. 25 ≤ (In+Ga)/(In+Ga+Ge+Zn) ≤ 70

COMPOUND FOR TRANSPARENT ELECTROCONDUCTIVE THIN FILM, METHOD FOR FORMING THIN FILM USING THE SAME

LEE YOUNG JOO / KIM JU YOUNG / OH YOON SUK / YANG HEOK

According to an embodiment, disclosed are a transparent conductive thin film composition, and a method for forming a transparent conductive thin film using the composition. The transparent conductive thin film composition comprises indium (In), gallium (Ga), germanium (Ge), zinc (Zn), and oxygen (O2), wherein the number of In, Ga, Ge and Zn elements satisfies the condition: 25 <= (In+Ga)/(In+Ga+Ge+Zn) <= 70.

본 발명에 따른 실시예에서는 투명도전성 박막 조성물 및 이를 이용한 투명도전성 박막 형성방법이 개시된다. 투명도전성 박막 조성물은 인듐(In), 갈륨(Ga), 게르마늄(Ge), 아연(Zn) 및 산소(O2)를 포함하되, 상기 인듐, 갈륨, 게르마늄 및 아연의 원자수의 비가 하기 식을 만족한다. 25 ≤ (In+Ga)/(In+Ga+Ge+Zn) ≤ 70

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Titel:

COMPOUND FOR TRANSPARENT ELECTROCONDUCTIVE THIN FILM, METHOD FOR FORMING THIN FILM USING THE SAME

Weitere Titelangaben:

투명도전성 박막 조성물, 이를 이용한 투명도전성 박막 형성방법

Beteiligte:

LEE YOUNG JOO (Autor:in) / KIM JU YOUNG (Autor:in) / OH YOON SUK (Autor:in) / YANG HEOK (Autor:in)

Erscheinungsdatum:

07.07.2015

Medientyp:

Patent

Format:

Elektronische Ressource

Sprache:

Koreanisch

Klassifikation:

IPC: H01B CABLES , Kabel / C04B Kalk , LIME

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