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METHOD FOR MANUFACTURING SILICON CARBIDE POWER
According to an embodiment of the present invention, a silicon carbide powder preparation method includes the steps of: preparing silicon carbide powder having a predetermined particle size; and growing the prepared silicon carbide powder in the particle size. The particle growth step includes: a first heat treatment step of treating the prepared silicon carbide powder with heat at a first temperature for a first period; and a second heat treatment step of treating the prepared silicon carbide powder with heat after the first heat treatment step at a second temperature lower than the first temperature for a second period longer than the first period.
METHOD FOR MANUFACTURING SILICON CARBIDE POWER
According to an embodiment of the present invention, a silicon carbide powder preparation method includes the steps of: preparing silicon carbide powder having a predetermined particle size; and growing the prepared silicon carbide powder in the particle size. The particle growth step includes: a first heat treatment step of treating the prepared silicon carbide powder with heat at a first temperature for a first period; and a second heat treatment step of treating the prepared silicon carbide powder with heat after the first heat treatment step at a second temperature lower than the first temperature for a second period longer than the first period.
METHOD FOR MANUFACTURING SILICON CARBIDE POWER
LEE DONG HWA (Autor:in) / KIM BYUNG SOOK (Autor:in)
21.08.2015
Patent
Elektronische Ressource
Koreanisch
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