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OXIDE SPUTTERING TARGET
The present invention relates to an oxide sputtering target. More specifically, arcing is reduced during a sputtering process to reduce generation of a nodule formed on the surface. Therefore, stability of the sputtering process can be secured, and, ultimately, the present invention is capable of preparing an excellent thin film having low surface roughness. To achieve the purpose, the present invention comprises: a pellet composed of materials based on a composition of In, Sn, Ga, and O, and having a second phase composed of Ga3-xIn5+xSn2O16; and a backing plate bonded to a rear surface of the pellet to support the pellet, wherein x is from 0.3 to 1.8.
OXIDE SPUTTERING TARGET
The present invention relates to an oxide sputtering target. More specifically, arcing is reduced during a sputtering process to reduce generation of a nodule formed on the surface. Therefore, stability of the sputtering process can be secured, and, ultimately, the present invention is capable of preparing an excellent thin film having low surface roughness. To achieve the purpose, the present invention comprises: a pellet composed of materials based on a composition of In, Sn, Ga, and O, and having a second phase composed of Ga3-xIn5+xSn2O16; and a backing plate bonded to a rear surface of the pellet to support the pellet, wherein x is from 0.3 to 1.8.
OXIDE SPUTTERING TARGET
KANG SHIN HYUK (Autor:in) / PARK JU OK (Autor:in) / OK KANG MIN (Autor:in) / KWON SE HEE (Autor:in)
16.09.2015
Patent
Elektronische Ressource
Koreanisch
OXIDE SPUTTERING TARGET AND OXIDE SPUTTERING TARGET PRODUCTION METHOD
Europäisches Patentamt | 2021
|OXIDE SPUTTERING TARGET AND OXIDE SPUTTERING TARGET PRODUCTION METHOD
Europäisches Patentamt | 2021
|