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A platform for research: civil engineering, architecture and urbanism
Member for semiconductor manufacturing apparatus including aluminum nitride sintered body
An aluminum nitride sintered body contains 1 to 5% by weight of yttrium oxide, 10 to 100 ppm of titanium (Ti) and excess aluminum nitride (AlN). Accordingly, the volume resistance value and thermal conductivity at high temperatures are improved, and the generation of impurities can be suppressed during a semiconductor manufacturing process.
질화 알루미늄 소결체는, 1 내지 5 중량%의 산화 이트륨, 10 내지 100 ppm의 티타늄(Ti) 및 여분의 질화 알루미늄(AlN)을 포함한다. 이로써, 고온에서의 체적 저항값 및 열전도율이 개선되며, 반도체 제조 공정 중 불순물의 발생이 억제될 수 있다.
Member for semiconductor manufacturing apparatus including aluminum nitride sintered body
An aluminum nitride sintered body contains 1 to 5% by weight of yttrium oxide, 10 to 100 ppm of titanium (Ti) and excess aluminum nitride (AlN). Accordingly, the volume resistance value and thermal conductivity at high temperatures are improved, and the generation of impurities can be suppressed during a semiconductor manufacturing process.
질화 알루미늄 소결체는, 1 내지 5 중량%의 산화 이트륨, 10 내지 100 ppm의 티타늄(Ti) 및 여분의 질화 알루미늄(AlN)을 포함한다. 이로써, 고온에서의 체적 저항값 및 열전도율이 개선되며, 반도체 제조 공정 중 불순물의 발생이 억제될 수 있다.
Member for semiconductor manufacturing apparatus including aluminum nitride sintered body
질화 알루미늄 소결체를 포함하는 반도체 제조 장치용 부재
JUNG YOO HYUN (author)
2022-05-17
Patent
Electronic Resource
Korean
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