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Thin film laminate structure integrated device including the same and method of manufacturing the thin film laminate structure
Disclosed are a thin film laminate structure, an integrated device including the same, and a method for manufacturing the thin film laminate structure. The thin film laminate structure is a thin film laminate structure including two or more dielectric layers, wherein one layer of the dielectric layers of the thin film laminate structure includes a chemical compound represented by formula 1 and having a perovskite-type crystal structure having a B/B' composition ratio different from the ratio of one or more other layers. The chemical formula 1 is AB_(1-x)B'_xO_3 where A, B, B' and x are the same as defined in the present specifications. Therefore, provided is a thin film laminate structure having an improved dielectric constant and improved leakage current characteristics realized.
박막 적층 구조체, 이를 포함하는 집적 소자, 및 상기 박막 적층체의 제조방법이 개시된다. 상기 박막 적층 구조체는 2층 이상의 유전체층을 포함하는 박막 적층 구조체로서, 상기 박막 적층 구조체의 유전체층 중 일 층은 다른 일 층 이상과 서로 다른 B/B' 조성비를 갖는 페로브스카이트형 결정구조의 하기 화학식 1로 표시되는 화합물을 포함하는, 박막 적층 구조체를 포함할 수 있다: <화학식 1> AB1-xB'xO3 상기 식에서, A, B, B', x는 명세서에 개시된 바와 같다.
Thin film laminate structure integrated device including the same and method of manufacturing the thin film laminate structure
Disclosed are a thin film laminate structure, an integrated device including the same, and a method for manufacturing the thin film laminate structure. The thin film laminate structure is a thin film laminate structure including two or more dielectric layers, wherein one layer of the dielectric layers of the thin film laminate structure includes a chemical compound represented by formula 1 and having a perovskite-type crystal structure having a B/B' composition ratio different from the ratio of one or more other layers. The chemical formula 1 is AB_(1-x)B'_xO_3 where A, B, B' and x are the same as defined in the present specifications. Therefore, provided is a thin film laminate structure having an improved dielectric constant and improved leakage current characteristics realized.
박막 적층 구조체, 이를 포함하는 집적 소자, 및 상기 박막 적층체의 제조방법이 개시된다. 상기 박막 적층 구조체는 2층 이상의 유전체층을 포함하는 박막 적층 구조체로서, 상기 박막 적층 구조체의 유전체층 중 일 층은 다른 일 층 이상과 서로 다른 B/B' 조성비를 갖는 페로브스카이트형 결정구조의 하기 화학식 1로 표시되는 화합물을 포함하는, 박막 적층 구조체를 포함할 수 있다: <화학식 1> AB1-xB'xO3 상기 식에서, A, B, B', x는 명세서에 개시된 바와 같다.
Thin film laminate structure integrated device including the same and method of manufacturing the thin film laminate structure
박막 적층 구조체, 이를 포함하는 집적 소자, 및 상기 박막 적층체의 제조방법
LEE KI YOUNG (Autor:in) / CHAR KOOK RIN (Autor:in) / NA BYUNG HOON (Autor:in) / LEE HA HOON (Autor:in) / SONG DO WON (Autor:in)
02.08.2022
Patent
Elektronische Ressource
Koreanisch
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