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Ceramic structure, method for manufacturing the same, and member for semiconductor manufacturing apparatus

ATSUJI KYOHEI / NISHIMURA NOBORU / KATSUDA YUJI

A ceramic structure 10 includes a heater electrode 14 within a disk-shaped AlN ceramic substrate 12. The heater electrode 14 contains a metal filler in the main component WC. The metal filler (such as Ru or RuAl) has a lower resistivity and a higher thermal expansion coefficient than AlN. An absolute value of a difference |ΔCTE| between a thermal expansion coefficient of the AlN ceramic substrate 12 and a thermal expansion coefficient of the heater electrode 14 at a temperature in the range of 40° C. to 1000° C. is 0.35 ppm/° C. or less.

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Ceramic structure, method for manufacturing the same, and member for semiconductor manufacturing apparatus

ATSUJI KYOHEI / NISHIMURA NOBORU / KATSUDA YUJI

A ceramic structure 10 includes a heater electrode 14 within a disk-shaped AlN ceramic substrate 12. The heater electrode 14 contains a metal filler in the main component WC. The metal filler (such as Ru or RuAl) has a lower resistivity and a higher thermal expansion coefficient than AlN. An absolute value of a difference |ΔCTE| between a thermal expansion coefficient of the AlN ceramic substrate 12 and a thermal expansion coefficient of the heater electrode 14 at a temperature in the range of 40° C. to 1000° C. is 0.35 ppm/° C. or less.

Ceramic structure, method for manufacturing the same, and member for semiconductor manufacturing apparatus

ATSUJI KYOHEI / NISHIMURA NOBORU / KATSUDA YUJI

A ceramic structure 10 includes a heater electrode 14 within a disk-shaped AlN ceramic substrate 12. The heater electrode 14 contains a metal filler in the main component WC. The metal filler (such as Ru or RuAl) has a lower resistivity and a higher thermal expansion coefficient than AlN. An absolute value of a difference |ΔCTE| between a thermal expansion coefficient of the AlN ceramic substrate 12 and a thermal expansion coefficient of the heater electrode 14 at a temperature in the range of 40° C. to 1000° C. is 0.35 ppm/° C. or less.

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Titel:

Ceramic structure, method for manufacturing the same, and member for semiconductor manufacturing apparatus

Beteiligte:

ATSUJI KYOHEI (Autor:in) / NISHIMURA NOBORU (Autor:in) / KATSUDA YUJI (Autor:in)

Erscheinungsdatum:

08.12.2020

Medientyp:

Patent

Format:

Elektronische Ressource

Sprache:

Englisch

Klassifikation:

IPC: H05B ELECTRIC HEATING , Elektrische Heizung / C04B Kalk , LIME / H01L Halbleiterbauelemente , SEMICONDUCTOR DEVICES

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