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Polycrystalline SiC substrate and method for manufacturing same

YAGI KUNIAKI / KOBAYASHI MOTOKI

A support substrate 2 is a polycrystalline SiC substrate formed of polycrystalline SiC. Assuming that one of the two sides of the polycrystalline SiC substrate is a first side and that the other side is a second side, a substrate grain size change rate of the polycrystalline SiC substrate, which is a value obtained by dividing a difference between the average value of crystal grain sizes of the polycrystalline SiC on the first side and the average value of crystal grain sizes of the polycrystalline SiC on the second side by a thickness of the polycrystalline SiC substrate, is 0.43% or less. A radius of curvature of the polycrystalline SiC substrate is 142 m or more.

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Polycrystalline SiC substrate and method for manufacturing same

YAGI KUNIAKI / KOBAYASHI MOTOKI

A support substrate 2 is a polycrystalline SiC substrate formed of polycrystalline SiC. Assuming that one of the two sides of the polycrystalline SiC substrate is a first side and that the other side is a second side, a substrate grain size change rate of the polycrystalline SiC substrate, which is a value obtained by dividing a difference between the average value of crystal grain sizes of the polycrystalline SiC on the first side and the average value of crystal grain sizes of the polycrystalline SiC on the second side by a thickness of the polycrystalline SiC substrate, is 0.43% or less. A radius of curvature of the polycrystalline SiC substrate is 142 m or more.

Polycrystalline SiC substrate and method for manufacturing same

YAGI KUNIAKI / KOBAYASHI MOTOKI

A support substrate 2 is a polycrystalline SiC substrate formed of polycrystalline SiC. Assuming that one of the two sides of the polycrystalline SiC substrate is a first side and that the other side is a second side, a substrate grain size change rate of the polycrystalline SiC substrate, which is a value obtained by dividing a difference between the average value of crystal grain sizes of the polycrystalline SiC on the first side and the average value of crystal grain sizes of the polycrystalline SiC on the second side by a thickness of the polycrystalline SiC substrate, is 0.43% or less. A radius of curvature of the polycrystalline SiC substrate is 142 m or more.

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Titel:

Polycrystalline SiC substrate and method for manufacturing same

Beteiligte:

YAGI KUNIAKI (Autor:in) / KOBAYASHI MOTOKI (Autor:in)

Erscheinungsdatum:

02.03.2021

Medientyp:

Patent

Format:

Elektronische Ressource

Sprache:

Englisch

Klassifikation:

IPC: C04B Kalk , LIME / C30B SINGLE-CRYSTAL GROWTH , Züchten von Einkristallen / H01L Halbleiterbauelemente , SEMICONDUCTOR DEVICES

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