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Tungsten silicide target and method of manufacturing same
A tungsten silicide target capable of suppressing the occurrence of particles during sputtering is provided by a method different from conventional methods. The tungsten silicide target includes not more than 5 low-density semi-sintered portions having a size of 50 μm or more per 80000 mm2 on the sputtering surface.
Tungsten silicide target and method of manufacturing same
A tungsten silicide target capable of suppressing the occurrence of particles during sputtering is provided by a method different from conventional methods. The tungsten silicide target includes not more than 5 low-density semi-sintered portions having a size of 50 μm or more per 80000 mm2 on the sputtering surface.
Tungsten silicide target and method of manufacturing same
ODA KUNIHIRO (Autor:in) / ASANO TAKAYUKI (Autor:in)
29.06.2021
Patent
Elektronische Ressource
Englisch
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