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Metal oxynitride thin film, process for producing metal oxynitride thin film, and capacitor element
A metal oxynitride thin film having a perovskite structure, in which the metal oxynitride thin film has a composition represented by a compositional formula A1+αBOx+αNy wherein α is larger than zero and 0.300 or less, x+α is larger than 2.450, and y is 0.300 or more and 0.700 or less, an AO structure having a layered structure parallel to a plane perpendicular to a c-axis of the perovskite structure and having a composition represented by a general formula AO, and the AO structure is bonded with the perovskite structure and incorporated in the perovskite structure.
Metal oxynitride thin film, process for producing metal oxynitride thin film, and capacitor element
A metal oxynitride thin film having a perovskite structure, in which the metal oxynitride thin film has a composition represented by a compositional formula A1+αBOx+αNy wherein α is larger than zero and 0.300 or less, x+α is larger than 2.450, and y is 0.300 or more and 0.700 or less, an AO structure having a layered structure parallel to a plane perpendicular to a c-axis of the perovskite structure and having a composition represented by a general formula AO, and the AO structure is bonded with the perovskite structure and incorporated in the perovskite structure.
Metal oxynitride thin film, process for producing metal oxynitride thin film, and capacitor element
YAMAZAKI KUMIKO (Autor:in) / NAGAMINE YUKI (Autor:in) / SHIBAHARA TAKESHI (Autor:in) / UMEDA YUJI (Autor:in) / YAMAZAKI JUNICHI (Autor:in)
03.08.2021
Patent
Elektronische Ressource
Englisch
METAL OXYNITRIDE THIN FILM, PROCESS FOR PRODUCING METAL OXYNITRIDE THIN FILM, AND CAPACITOR ELEMENT
Europäisches Patentamt | 2019
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