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Amorphous metal oxide semiconductor layer and semiconductor device
Methods for producing the amorphous metal oxide semiconductor layer where amorphous metal oxide semiconductor layer is formed by use of a precursor composition containing a metal salt, a primary amide, and a water-based solution. The methodology for producing the amorphous metal oxide semiconductor layer includes applying the precursor composition onto a substrate to form a precursor film, and firing the film at a temperature of 150° C. or higher and lower than 300° C.
Amorphous metal oxide semiconductor layer and semiconductor device
Methods for producing the amorphous metal oxide semiconductor layer where amorphous metal oxide semiconductor layer is formed by use of a precursor composition containing a metal salt, a primary amide, and a water-based solution. The methodology for producing the amorphous metal oxide semiconductor layer includes applying the precursor composition onto a substrate to form a precursor film, and firing the film at a temperature of 150° C. or higher and lower than 300° C.
Amorphous metal oxide semiconductor layer and semiconductor device
HIROI YOSHIOMI (Autor:in) / MAEDA SHINICHI (Autor:in)
06.02.2024
Patent
Elektronische Ressource
Englisch
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