Precursor composition for forming amorphous metal oxide semiconductor layer, amorphous metal oxide semiconductor layer, method for producing same, and semiconductor device: Fid-Bau Portal

Precursor composition for forming amorphous metal oxide semiconductor layer, amorphous metal oxide semiconductor layer, method for producing same, and semiconductor device

HIROI YOSHIOMI / MAEDA SHINICHI

Abstract

The invention provides a precursor composition for forming an amorphous metal oxide semiconductor layer, containing a metal salt, a primary amide, and a water-based solution. An amorphous metal oxide semiconductor layer is formed by use of the composition.

Zugriff

Download

Seitennavigation

Dokumentinformationen

Ähnliche Titel

Exportieren, teilen und zitieren

Precursor composition for forming amorphous metal oxide semiconductor layer, amorphous metal oxide semiconductor layer, method for producing same, and semiconductor device

HIROI YOSHIOMI / MAEDA SHINICHI

Abstract

Precursor composition for forming amorphous metal oxide semiconductor layer, amorphous metal oxide semiconductor layer, method for producing same, and semiconductor device

HIROI YOSHIOMI / MAEDA SHINICHI

Abstract

Zugriff

Download

Seitennavigation

Dokumentinformationen

Ähnliche Titel

Exportieren, teilen und zitieren

Dokumentinformationen

Titel:

Precursor composition for forming amorphous metal oxide semiconductor layer, amorphous metal oxide semiconductor layer, method for producing same, and semiconductor device

Beteiligte:

HIROI YOSHIOMI (Autor:in) / MAEDA SHINICHI (Autor:in)

Erscheinungsdatum:

25.08.2020

Medientyp:

Patent

Format:

Elektronische Ressource

Sprache:

Englisch

Klassifikation:

IPC: H01L Halbleiterbauelemente , SEMICONDUCTOR DEVICES / C04B Kalk , LIME