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ANTIFERROELECTRIC CONTAINING DYSPROSIUM AND A MANUFACTURING METHOD THEREOF
An antiferroelectric and a method for manufacturing an antiferroelectric are disclosed herein. The antiferroelectric may have high permittivity and breakdown voltage by having a PbxLa1-x([Zr1-YSnY]ZTi1-Z) composition. The manufacturing of the antiferroelectric may be performed through appropriate mixing and dysprosium addition.
ANTIFERROELECTRIC CONTAINING DYSPROSIUM AND A MANUFACTURING METHOD THEREOF
An antiferroelectric and a method for manufacturing an antiferroelectric are disclosed herein. The antiferroelectric may have high permittivity and breakdown voltage by having a PbxLa1-x([Zr1-YSnY]ZTi1-Z) composition. The manufacturing of the antiferroelectric may be performed through appropriate mixing and dysprosium addition.
ANTIFERROELECTRIC CONTAINING DYSPROSIUM AND A MANUFACTURING METHOD THEREOF
KIM HYUNG SUK (Autor:in) / SHIN HYO SOON (Autor:in) / YEO DONG HUN (Autor:in) / CHOI JEOUNG SIK (Autor:in)
18.04.2024
Patent
Elektronische Ressource
Englisch
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