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OXIDE SINTERED BODY AND SPUTTERING TARGET, AND METHODS FOR MANUFACTURING SAME

TAO YUKI / NAKANE YASUO / HATA HIDEO

Disclosed is an oxide sintered body, wherein contents of zinc, indium, gallium and tin relative to all metal elements satisfy the following inequality expressions: 40 atomic %≤[Zn]≤55 atomic %, 20 atomic %≤[In]≤40 atomic %, 5 atomic %≤[Ga]≤15 atomic %, and 5 atomic %≤[Sn]≤20 atomic %, where the contents (atomic %) of zinc, indium, gallium and tin relative to all metal elements excluding oxygen are respectively taken as [Zn], [In], [Ga] and [Sn], wherein the oxide sintered body has a relative density of 95% or more, and wherein the oxide sintered body includes, as a crystal phase, 5 to 20 volume % of InGaZn2 O5.

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OXIDE SINTERED BODY AND SPUTTERING TARGET, AND METHODS FOR MANUFACTURING SAME

TAO YUKI / NAKANE YASUO / HATA HIDEO

Disclosed is an oxide sintered body, wherein contents of zinc, indium, gallium and tin relative to all metal elements satisfy the following inequality expressions: 40 atomic %≤[Zn]≤55 atomic %, 20 atomic %≤[In]≤40 atomic %, 5 atomic %≤[Ga]≤15 atomic %, and 5 atomic %≤[Sn]≤20 atomic %, where the contents (atomic %) of zinc, indium, gallium and tin relative to all metal elements excluding oxygen are respectively taken as [Zn], [In], [Ga] and [Sn], wherein the oxide sintered body has a relative density of 95% or more, and wherein the oxide sintered body includes, as a crystal phase, 5 to 20 volume % of InGaZn2 O5.

OXIDE SINTERED BODY AND SPUTTERING TARGET, AND METHODS FOR MANUFACTURING SAME

TAO YUKI / NAKANE YASUO / HATA HIDEO

Disclosed is an oxide sintered body, wherein contents of zinc, indium, gallium and tin relative to all metal elements satisfy the following inequality expressions: 40 atomic %≤[Zn]≤55 atomic %, 20 atomic %≤[In]≤40 atomic %, 5 atomic %≤[Ga]≤15 atomic %, and 5 atomic %≤[Sn]≤20 atomic %, where the contents (atomic %) of zinc, indium, gallium and tin relative to all metal elements excluding oxygen are respectively taken as [Zn], [In], [Ga] and [Sn], wherein the oxide sintered body has a relative density of 95% or more, and wherein the oxide sintered body includes, as a crystal phase, 5 to 20 volume % of InGaZn2 O5.

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Titel:

OXIDE SINTERED BODY AND SPUTTERING TARGET, AND METHODS FOR MANUFACTURING SAME

Beteiligte:

TAO YUKI (Autor:in) / NAKANE YASUO (Autor:in) / HATA HIDEO (Autor:in)

Erscheinungsdatum:

13.06.2019

Medientyp:

Patent

Format:

Elektronische Ressource

Sprache:

Englisch

Klassifikation:

IPC: C04B Kalk , LIME / C23C Beschichten metallischer Werkstoffe , COATING METALLIC MATERIAL

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