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OXIDE SINTERED BODY AND SPUTTERING TARGET, AND METHODS FOR MANUFACTURING SAME
Disclosed is an oxide sintered body, wherein contents of zinc, indium, gallium and tin relative to all metal elements satisfy the following inequality expressions: 40 atomic %≤[Zn]≤55 atomic %, 20 atomic %≤[In]≤40 atomic %, 5 atomic %≤[Ga]≤15 atomic %, and 5 atomic %≤[Sn]≤20 atomic %, where the contents (atomic %) of zinc, indium, gallium and tin relative to all metal elements excluding oxygen are respectively taken as [Zn], [In], [Ga] and [Sn], wherein the oxide sintered body has a relative density of 95% or more, and wherein the oxide sintered body includes, as a crystal phase, 5 to 20 volume % of InGaZn2 O5.
OXIDE SINTERED BODY AND SPUTTERING TARGET, AND METHODS FOR MANUFACTURING SAME
Disclosed is an oxide sintered body, wherein contents of zinc, indium, gallium and tin relative to all metal elements satisfy the following inequality expressions: 40 atomic %≤[Zn]≤55 atomic %, 20 atomic %≤[In]≤40 atomic %, 5 atomic %≤[Ga]≤15 atomic %, and 5 atomic %≤[Sn]≤20 atomic %, where the contents (atomic %) of zinc, indium, gallium and tin relative to all metal elements excluding oxygen are respectively taken as [Zn], [In], [Ga] and [Sn], wherein the oxide sintered body has a relative density of 95% or more, and wherein the oxide sintered body includes, as a crystal phase, 5 to 20 volume % of InGaZn2 O5.
OXIDE SINTERED BODY AND SPUTTERING TARGET, AND METHODS FOR MANUFACTURING SAME
TAO YUKI (author) / NAKANE YASUO (author) / HATA HIDEO (author)
2019-06-13
Patent
Electronic Resource
English
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