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Al2O3 Sputtering Target and Production Method Thereof
An Al2O3 sputtering target having a purity of 99.99 wt % or higher, a relative density of 85% or higher and 95% or less, a volume resistivity of 10×1014 Ω·cm or less, and a dielectric tangent of 15×10−4 or more. An object of the present invention is to provide an Al2O3 sputtering target having favorable sputtering characteristics, and in particular an Al2O3 sputtering target and a production method thereof capable of increasing the deposition rate without having to increase the sputtering power.
Al2O3 Sputtering Target and Production Method Thereof
An Al2O3 sputtering target having a purity of 99.99 wt % or higher, a relative density of 85% or higher and 95% or less, a volume resistivity of 10×1014 Ω·cm or less, and a dielectric tangent of 15×10−4 or more. An object of the present invention is to provide an Al2O3 sputtering target having favorable sputtering characteristics, and in particular an Al2O3 sputtering target and a production method thereof capable of increasing the deposition rate without having to increase the sputtering power.
Al2O3 Sputtering Target and Production Method Thereof
KOIDO YOSHIMASA (Autor:in)
23.09.2021
Patent
Elektronische Ressource
Englisch
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