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AL2O3 SPUTTERING TARGET AND METHOD FOR PRODUCING SAME
An AlOsputtering target having a purity of 99.99 wt% or higher, a relative density of 85% or higher and 95% or less, a volume resistivity of 10 × 10Ω•cm or less, and a dielectric tangent of 15 × 10or more. An object of the present invention is to provide an AlOsputtering target having favorable sputtering characteristics, and in particular an AlOsputtering target and a production method thereof capable of increasing the deposition rate without having to increase the sputtering power.
AL2O3 SPUTTERING TARGET AND METHOD FOR PRODUCING SAME
An AlOsputtering target having a purity of 99.99 wt% or higher, a relative density of 85% or higher and 95% or less, a volume resistivity of 10 × 10Ω•cm or less, and a dielectric tangent of 15 × 10or more. An object of the present invention is to provide an AlOsputtering target having favorable sputtering characteristics, and in particular an AlOsputtering target and a production method thereof capable of increasing the deposition rate without having to increase the sputtering power.
AL2O3 SPUTTERING TARGET AND METHOD FOR PRODUCING SAME
AL2O3-SPUTTERTARGET UND VERFAHREN ZUR HERSTELLUNG DAVON
CIBLE DE PULVÉRISATION D'AL2O3 ET SON PROCÉDÉ DE PRODUCTION
KOIDO YOSHIMASA (Autor:in)
21.08.2019
Patent
Elektronische Ressource
Englisch
AL2O3 SPUTTERING TARGET AND METHOD FOR PRODUCING SAME
| Europäisches Patentamt | 2018
| Europäisches Patentamt | 2020