Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Ceramic material and sputtering target member
A ceramic material of the present invention contains magnesium, zirconium, lithium, and oxygen as main components. The crystal phase of a solid solution obtained by dissolving zirconium oxide and lithium oxide in magnesium oxide is a main phase. The XRD peak of a (200) plane of the solid solution with CuKα rays preferably appears at 2θ=42.89° or less which is smaller than an angle at which a peak of a cubic crystal of magnesium oxide appears. The XRD peak more preferably appears at 2θ=42.38° to 42.89° and further preferably at 2θ=42.82° to 42.89°. In the ceramic material, the molar ratio Li/Zr of Li to Zr is preferably in the range of 1.96 or more and 2.33 or less.
Ceramic material and sputtering target member
A ceramic material of the present invention contains magnesium, zirconium, lithium, and oxygen as main components. The crystal phase of a solid solution obtained by dissolving zirconium oxide and lithium oxide in magnesium oxide is a main phase. The XRD peak of a (200) plane of the solid solution with CuKα rays preferably appears at 2θ=42.89° or less which is smaller than an angle at which a peak of a cubic crystal of magnesium oxide appears. The XRD peak more preferably appears at 2θ=42.38° to 42.89° and further preferably at 2θ=42.82° to 42.89°. In the ceramic material, the molar ratio Li/Zr of Li to Zr is preferably in the range of 1.96 or more and 2.33 or less.
Ceramic material and sputtering target member
SATO YOSUKE (Autor:in) / ISODA YOSHINORI (Autor:in) / KATSUDA YUJI (Autor:in)
09.08.2016
Patent
Elektronische Ressource
Englisch
IPC:
C04B
Kalk
,
LIME
/
C01G
Verbindungen der von den Unterklassen C01D oder C01F nicht umfassten Metalle
,
COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
/
C23C
Beschichten metallischer Werkstoffe
,
COATING METALLIC MATERIAL
/
G01R
Messen elektrischer Größen
,
MEASURING ELECTRIC VARIABLES
/
G11B
Informationsspeicherung mit Relativbewegung zwischen Aufzeichnungsträger und Wandler
,
INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
/
H01L
Halbleiterbauelemente
,
SEMICONDUCTOR DEVICES