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Impact of initial-oxidation on 1/f noise and subthreshold swing of n-channel MOSFETs
The impact of initial-oxidation on Low-frequency noise and subthreshold swing of MOSFETs is investigated. The low-frequency noise is improved significantly with initialoxidation and SS reduction is observed. Analysis on experimental results shed light on the well-known controversy about the origin of low-frequency noise. In this paper, the impact of initial-oxidation in thin gate oxide n-channel MOSFETs is characterized across gate-bias 1V.
Impact of initial-oxidation on 1/f noise and subthreshold swing of n-channel MOSFETs
The impact of initial-oxidation on Low-frequency noise and subthreshold swing of MOSFETs is investigated. The low-frequency noise is improved significantly with initialoxidation and SS reduction is observed. Analysis on experimental results shed light on the well-known controversy about the origin of low-frequency noise. In this paper, the impact of initial-oxidation in thin gate oxide n-channel MOSFETs is characterized across gate-bias 1V.
Impact of initial-oxidation on 1/f noise and subthreshold swing of n-channel MOSFETs
Han-Soo Joo, (Autor:in) / In-Shik Han, (Autor:in) / Tae-Kyu Goo, (Autor:in) / Ook-Sang Yoo, (Autor:in) / Won-Ho Choi, (Autor:in) / Ga-Won Lee, (Autor:in) / Hi-Deok Lee, (Autor:in)
01.10.2006
466588 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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