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Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Effects of Channel Orientations, High-? Gate Stacks and Stress on UTB-FETs: A QDD Simulation Study
In this work we propose a unified model for the low-field effective electron mobility in SOI and DG-MOSFETs with ultrathin SiO2/HfO2 gate stacks, different substrate and channel orientations and uniaxial stress conditions.The model accounts for quantum-confinement effects in the MOSFET channel. Next, we apply this mobility model to a 1D quantum drift-diffusion (QDD) transport model in order to investigate the extent to which the low-field mobility impacts the I-V characteristics. Short (Lg = 22 nm) DGFETs,where mobility is affected by quantum-confinement effects, ultrathin SiO2/HfO2 gate stacks and metal gate,have been investigated. Finally, the correlations between the mobility enhancement induced by uniaxial stress in a22 nm DG-FET, the on-current and transconductance are examined.
Effects of Channel Orientations, High-? Gate Stacks and Stress on UTB-FETs: A QDD Simulation Study
In this work we propose a unified model for the low-field effective electron mobility in SOI and DG-MOSFETs with ultrathin SiO2/HfO2 gate stacks, different substrate and channel orientations and uniaxial stress conditions.The model accounts for quantum-confinement effects in the MOSFET channel. Next, we apply this mobility model to a 1D quantum drift-diffusion (QDD) transport model in order to investigate the extent to which the low-field mobility impacts the I-V characteristics. Short (Lg = 22 nm) DGFETs,where mobility is affected by quantum-confinement effects, ultrathin SiO2/HfO2 gate stacks and metal gate,have been investigated. Finally, the correlations between the mobility enhancement induced by uniaxial stress in a22 nm DG-FET, the on-current and transconductance are examined.
Effects of Channel Orientations, High-? Gate Stacks and Stress on UTB-FETs: A QDD Simulation Study
Silvestri, Luca (Autor:in) / Reggiani, Susanna (Autor:in) / Gnani, Elena (Autor:in) / Gnudi, Antonio (Autor:in) / Rudan, Massimo (Autor:in) / Baccarani, Giorgio (Autor:in)
01.09.2008
259089 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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