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Thin-film SOI n-MOSFET low-frequency noise measurements at elevated temperatures

Dessard, V. / Eggermont, J.P. / Flandre, D.

We have performed low-frequency 1/f noise measurements on thin-film SOI n-MOSFETs up to 250/spl deg/C using a dedicated set-up. We show the superiority of thin-film fully-depleted (FD) SOI n-MOSFETs versus partially-depleted (PD) devices from a noise perspective over temperature. We observe the constancy of 1/f noise with increasing temperature when the device is FD, and observe a new noise contribution which can affect the integrated input referred noise under certain conditions. A first-order explanation is proposed for this additional noise. Results are then compared to the input noise measured on a single stage OTA.

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Thin-film SOI n-MOSFET low-frequency noise measurements at elevated temperatures

Dessard, V. / Eggermont, J.P. / Flandre, D.

We have performed low-frequency 1/f noise measurements on thin-film SOI n-MOSFETs up to 250/spl deg/C using a dedicated set-up. We show the superiority of thin-film fully-depleted (FD) SOI n-MOSFETs versus partially-depleted (PD) devices from a noise perspective over temperature. We observe the constancy of 1/f noise with increasing temperature when the device is FD, and observe a new noise contribution which can affect the integrated input referred noise under certain conditions. A first-order explanation is proposed for this additional noise. Results are then compared to the input noise measured on a single stage OTA.

Thin-film SOI n-MOSFET low-frequency noise measurements at elevated temperatures

Dessard, V. / Eggermont, J.P. / Flandre, D.

We have performed low-frequency 1/f noise measurements on thin-film SOI n-MOSFETs up to 250/spl deg/C using a dedicated set-up. We show the superiority of thin-film fully-depleted (FD) SOI n-MOSFETs versus partially-depleted (PD) devices from a noise perspective over temperature. We observe the constancy of 1/f noise with increasing temperature when the device is FD, and observe a new noise contribution which can affect the integrated input referred noise under certain conditions. A first-order explanation is proposed for this additional noise. Results are then compared to the input noise measured on a single stage OTA.

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Titel:

Thin-film SOI n-MOSFET low-frequency noise measurements at elevated temperatures

Beteiligte:

Dessard, V. (Autor:in) / Eggermont, J.P. (Autor:in) / Flandre, D. (Autor:in)

Erschienen in:

1998 High-Temperature Electronic Materials, Devices and Sensors Conference (Cat. No.98EX132) ; 94-99

Erscheinungsdatum:

01.01.1998

Format / Umfang:

581647 byte

ISBN:

DOI:

https://doi.org/10.1109/HTEMDS.1998.730657

Medientyp:

Aufsatz (Konferenz)

Format:

Elektronische Ressource

Sprache:

Englisch

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