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Analytical Theory of Graphene Nanoribbon Transistors
Graphene has emerged as one of the most promising materials to address scaling challenges in the post silicon era. A simple model for graphene nanoribbon field-effect transistors (GNRFETs) is developed for treating the effects of edge bond relaxation, the third nearest neighbor interaction, and edge scattering, all of which are pronounced in GNRFETs, but not in carbon nanotube FETs.
Analytical Theory of Graphene Nanoribbon Transistors
Graphene has emerged as one of the most promising materials to address scaling challenges in the post silicon era. A simple model for graphene nanoribbon field-effect transistors (GNRFETs) is developed for treating the effects of edge bond relaxation, the third nearest neighbor interaction, and edge scattering, all of which are pronounced in GNRFETs, but not in carbon nanotube FETs.
Analytical Theory of Graphene Nanoribbon Transistors
Zhao, Pei (author) / Choudhury, Mihir (author) / Mohanram, Kartik (author) / Guo, Jing (author)
2008-09-01
193158 byte
Conference paper
Electronic Resource
English
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