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Characterization of near-interface oxide trap density in remote plasma nitrided oxides for nano-scale MOSFETs
Presented in this paper is the extracted depth profile of oxide trap density in ultra thin remote plasma nitrided oxides (RPNO) using multi-frequency and temperature charge pumping (CP) technique. The optimum nitrogen concentration in RPNO is discussed versus the gate oxide thickness for nanoscale CMOSFET.
Characterization of near-interface oxide trap density in remote plasma nitrided oxides for nano-scale MOSFETs
Presented in this paper is the extracted depth profile of oxide trap density in ultra thin remote plasma nitrided oxides (RPNO) using multi-frequency and temperature charge pumping (CP) technique. The optimum nitrogen concentration in RPNO is discussed versus the gate oxide thickness for nanoscale CMOSFET.
Characterization of near-interface oxide trap density in remote plasma nitrided oxides for nano-scale MOSFETs
Younghwan Son, (Autor:in) / Chang-Ki Baek, (Autor:in) / Bomsoo Kim, (Autor:in) / In-Shik Han, (Autor:in) / Tae-Gyu Goo, (Autor:in) / Ooksang You, (Autor:in) / Wonho Choi, (Autor:in) / Hee-Hwan Ji, (Autor:in) / Hi-Deok Lee, (Autor:in) / Kim, Dae M. (Autor:in)
01.10.2006
369555 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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