Investigation of Nitrided Atomic-Layer-Deposited Oxides in 4H-SiC Capacitors and MOSFETs: Fid-Bau Portal

Investigation of Nitrided Atomic-Layer-Deposited Oxides in 4H-SiC Capacitors and MOSFETs

Haney, S.K. / Misra, V. / Lichtenwalner, D.J. / Agarwal, A.K.

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Investigation of Nitrided Atomic-Layer-Deposited Oxides in 4H-SiC Capacitors and MOSFETs

Haney, S.K. / Misra, V. / Lichtenwalner, D.J. / Agarwal, A.K.

Investigation of Nitrided Atomic-Layer-Deposited Oxides in 4H-SiC Capacitors and MOSFETs

Haney, S.K. / Misra, V. / Lichtenwalner, D.J. / Agarwal, A.K.

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Titel:

Investigation of Nitrided Atomic-Layer-Deposited Oxides in 4H-SiC Capacitors and MOSFETs

Beteiligte:

Haney, S.K. (Autor:in) / Misra, V. (Autor:in) / Lichtenwalner, D.J. (Autor:in) / Agarwal, A.K. (Autor:in) / Lebedev, A.A. / Davydov, S.Y. / Ivanov, P.A. / Levinshtein, M.E.

Erschienen in:

Silicon Carbide and Related Materials 2012 Selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6, 2012, St. Petersburg, Russian Federation ; 707-710

MATERIALS SCIENCE FORUM ; 740/742

Erscheinungsdatum:

01.01.2013

Format / Umfang:

4 pages

ISSN:

0255-5476

Medientyp:

Aufsatz (Zeitschrift)

Format:

Sprache:

Englisch

Klassifikation:

DDC: 620.11

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Moon, J. H. / Cheong, K. Y. / Eom, D. I. et al. | British Library Online Contents | 2007

Gallium Nitride Metal-Insulator-Semiconductor Capacitors Using Low-Pressure Chemical Vapor Deposited Oxides

Matocha, K. / Chow, T. P. / Gutmann, R. J. | British Library Online Contents | 2002

Anticipation of nitrided oxides electrical thickness based on XPS measurement

Bienacel, J. / Barge, D. / Bidaud, M. et al. | British Library Online Contents | 2004

Characterization of Aluminum and Titanium Oxides Deposited on 4H-SiC by Atomic Layer Deposition Technique

Wolborski, M. / Bakowski, M. / Pore, V. et al. | British Library Online Contents | 2005

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