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A platform for research: civil engineering, architecture and urbanism
Characterization of near-interface oxide trap density in remote plasma nitrided oxides for nano-scale MOSFETs
Presented in this paper is the extracted depth profile of oxide trap density in ultra thin remote plasma nitrided oxides (RPNO) using multi-frequency and temperature charge pumping (CP) technique. The optimum nitrogen concentration in RPNO is discussed versus the gate oxide thickness for nanoscale CMOSFET.
Characterization of near-interface oxide trap density in remote plasma nitrided oxides for nano-scale MOSFETs
Presented in this paper is the extracted depth profile of oxide trap density in ultra thin remote plasma nitrided oxides (RPNO) using multi-frequency and temperature charge pumping (CP) technique. The optimum nitrogen concentration in RPNO is discussed versus the gate oxide thickness for nanoscale CMOSFET.
Characterization of near-interface oxide trap density in remote plasma nitrided oxides for nano-scale MOSFETs
Younghwan Son, (author) / Chang-Ki Baek, (author) / Bomsoo Kim, (author) / In-Shik Han, (author) / Tae-Gyu Goo, (author) / Ooksang You, (author) / Wonho Choi, (author) / Hee-Hwan Ji, (author) / Hi-Deok Lee, (author) / Kim, Dae M. (author)
2006-10-01
369555 byte
Conference paper
Electronic Resource
English
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