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Electrical transport properties of VO2 nanowire field effect transistors

Jongsun Maeng, / Gunho Jo, / Tak-Wook Kim, / Takhee Lee,

The VO2 nanowires were grown on Si3N4/Si substrate by a vapor transport method. Single crystalline rectangular structure of VO2 nanowires is verified by scanning electron microscopy and transmission electron microscopy. Individual VO2 nanowires were fabricated into field effect transistors (FETs). Electrical transport properties are extracted from these nanowire FETs.

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Electrical transport properties of VO2 nanowire field effect transistors

Jongsun Maeng, / Gunho Jo, / Tak-Wook Kim, / Takhee Lee,

The VO2 nanowires were grown on Si3N4/Si substrate by a vapor transport method. Single crystalline rectangular structure of VO2 nanowires is verified by scanning electron microscopy and transmission electron microscopy. Individual VO2 nanowires were fabricated into field effect transistors (FETs). Electrical transport properties are extracted from these nanowire FETs.

Electrical transport properties of VO2 nanowire field effect transistors

Jongsun Maeng, / Gunho Jo, / Tak-Wook Kim, / Takhee Lee,

The VO2 nanowires were grown on Si3N4/Si substrate by a vapor transport method. Single crystalline rectangular structure of VO2 nanowires is verified by scanning electron microscopy and transmission electron microscopy. Individual VO2 nanowires were fabricated into field effect transistors (FETs). Electrical transport properties are extracted from these nanowire FETs.

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Titel:

Electrical transport properties of VO2 nanowire field effect transistors

Beteiligte:

Jongsun Maeng, (Autor:in) / Gunho Jo, (Autor:in) / Tak-Wook Kim, (Autor:in) / Takhee Lee, (Autor:in)

Erschienen in:

2006 IEEE Nanotechnology Materials and Devices Conference ; 1 ; 476-477

Erscheinungsdatum:

01.10.2006

Format / Umfang:

548601 byte

ISBN:

978-1-4244-0541-1 , 978-1-4244-0540-4

DOI:

https://doi.org/10.1109/NMDC.2006.4388824

Medientyp:

Aufsatz (Konferenz)

Format:

Elektronische Ressource

Sprache:

Englisch

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