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    Electrical transport properties of VO2 nanowire field effect transistors

    New search for: Jongsun Maeng,
    New search for: Gunho Jo,
    New search for: Tak-Wook Kim,
    New search for: Takhee Lee,

    The VO2 nanowires were grown on Si3N4/Si substrate by a vapor transport method. Single crystalline rectangular structure of VO2 nanowires is verified by scanning electron microscopy and transmission electron microscopy. Individual VO2 nanowires were fabricated into field effect transistors (FETs). Electrical transport properties are extracted from these nanowire FETs.

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    Electrical transport properties of VO2 nanowire field effect transistors

    New search for: Jongsun Maeng,
    New search for: Gunho Jo,
    New search for: Tak-Wook Kim,
    New search for: Takhee Lee,

    The VO2 nanowires were grown on Si3N4/Si substrate by a vapor transport method. Single crystalline rectangular structure of VO2 nanowires is verified by scanning electron microscopy and transmission electron microscopy. Individual VO2 nanowires were fabricated into field effect transistors (FETs). Electrical transport properties are extracted from these nanowire FETs.

    Access

    Check access
    Check availability in my library
    Order at Subito €

    Electrical transport properties of VO2 nanowire field effect transistors

    New search for: Jongsun Maeng,
    New search for: Gunho Jo,
    New search for: Tak-Wook Kim,
    New search for: Takhee Lee,

    The VO2 nanowires were grown on Si3N4/Si substrate by a vapor transport method. Single crystalline rectangular structure of VO2 nanowires is verified by scanning electron microscopy and transmission electron microscopy. Individual VO2 nanowires were fabricated into field effect transistors (FETs). Electrical transport properties are extracted from these nanowire FETs.

    Access

    Check access
    Check availability in my library
    Order at Subito €

    Access

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    Document information
    Title:

    Electrical transport properties of VO2 nanowire field effect transistors

    Contributors:

    Jongsun Maeng, (author) / Gunho Jo, (author) / Tak-Wook Kim, (author) / Takhee Lee, (author)

    Published in:

    2006 IEEE Nanotechnology Materials and Devices Conference ; 1 ; 476-477

    Publication date:

    2006-10-01

    Size:

    548601 byte

    ISBN:

    978-1-4244-0541-1 , 978-1-4244-0540-4

    DOI:

    https://doi.org/10.1109/NMDC.2006.4388824

    Type of media:

    Conference paper

    Type of material:

    Electronic Resource

    Language:

    English

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