Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Simulations of Schottky-barrier nanowire field effect transistors
Quantum simulations of Schottky-barrier silicon nanowire field effect transistors and carbon nanotube field effect transistors have been carried out by solving the Poisson’s equation and non-equilibrium Green’s function self-consistently and their device characteristics are investigated.
Simulations of Schottky-barrier nanowire field effect transistors
Quantum simulations of Schottky-barrier silicon nanowire field effect transistors and carbon nanotube field effect transistors have been carried out by solving the Poisson’s equation and non-equilibrium Green’s function self-consistently and their device characteristics are investigated.
Simulations of Schottky-barrier nanowire field effect transistors
Jaehyun Lee, (Autor:in) / Chiyui Ahn, (Autor:in) / Mincheol Shin, (Autor:in)
01.10.2006
512944 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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