Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Comparison of electrical characteristics of back- and top-gate Si nanowire field-effect transistors
Top-gate(TG) field effect transistors (FETs) with channels composed of Si nanowires were successfully fabricated in this study using photolithographic processes. In the TG FETs fabricated on oxidized Si substrates, the channels composed of Si nanowires with diameters of about 100 nm with natural SiO2. The surfaces of the Si nanowires with natural SiO2 were covered with the gate metal to form TG FETs.
Comparison of electrical characteristics of back- and top-gate Si nanowire field-effect transistors
Top-gate(TG) field effect transistors (FETs) with channels composed of Si nanowires were successfully fabricated in this study using photolithographic processes. In the TG FETs fabricated on oxidized Si substrates, the channels composed of Si nanowires with diameters of about 100 nm with natural SiO2. The surfaces of the Si nanowires with natural SiO2 were covered with the gate metal to form TG FETs.
Comparison of electrical characteristics of back- and top-gate Si nanowire field-effect transistors
Changjoon Yoon, (Autor:in) / Kihyun Keem, (Autor:in) / Jeongmin Kang, (Autor:in) / Dong-Young Jeong, (Autor:in) / Moon-Sook Lee, (Autor:in) / In-Seok Yeoau]2, (Autor:in) / Joo-Tae Moon, (Autor:in) / Sangsig Kim, (Autor:in)
01.10.2006
373962 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
Electrical characteristics of Si-nanoparticle/Si-nanowire-based field-effect transistors
| British Library Online Contents | 2008
| British Library Online Contents | 2008