Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Determination of native defect concentrations and deviation from stoichiometry in silicon carbide
Determination of native defect concentrations and deviation from stoichiometry in silicon carbide
Determination of native defect concentrations and deviation from stoichiometry in silicon carbide
Lilov, S. K. (Autor:in)
01.01.1993
226 pages
Aufsatz (Zeitschrift)
Unbekannt
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Defect annealing in ion implanted silicon carbide
| British Library Online Contents | 1997
Oxygen-Related Defect Centers in 4H Silicon Carbide
| British Library Online Contents | 1998
Large Diameter, Low Defect Silicon Carbide Boule Growth
| British Library Online Contents | 2001
Irradiation-induced defect clustering and amorphization in silicon carbide
| British Library Online Contents | 2010
Orientation-Dependent Defect Formation in Silicon Carbide Epitaxial Layers
| British Library Online Contents | 2003