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Applications of Plasma Etching

Lehmann, Hans W.

Abstract The main driving force behind the rapid development of plasma etching or dry etching as it is often called is today’s IC-fabrication. Practically all pattern transfer steps from the mask to the underlying substrate are performed using dry etching techniques. Due to the anisotropic nature of the etching process it is possible to obtain a much higher packing density on the surface of the IC. In addition, dry etching has a distinct advantage over liquid wet etching since it does not require large quantities of highly purified liquids which later have to be disposed requiring expensive wastewater treatment.

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Applications of Plasma Etching

Lehmann, Hans W.

Abstract The main driving force behind the rapid development of plasma etching or dry etching as it is often called is today’s IC-fabrication. Practically all pattern transfer steps from the mask to the underlying substrate are performed using dry etching techniques. Due to the anisotropic nature of the etching process it is possible to obtain a much higher packing density on the surface of the IC. In addition, dry etching has a distinct advantage over liquid wet etching since it does not require large quantities of highly purified liquids which later have to be disposed requiring expensive wastewater treatment.

Applications of Plasma Etching

Lehmann, Hans W.

Abstract The main driving force behind the rapid development of plasma etching or dry etching as it is often called is today’s IC-fabrication. Practically all pattern transfer steps from the mask to the underlying substrate are performed using dry etching techniques. Due to the anisotropic nature of the etching process it is possible to obtain a much higher packing density on the surface of the IC. In addition, dry etching has a distinct advantage over liquid wet etching since it does not require large quantities of highly purified liquids which later have to be disposed requiring expensive wastewater treatment.

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Titel:

Applications of Plasma Etching

Beteiligte:

Lehmann, Hans W. (Autor:in)

Erschienen in:

Plasma-Surface Interactions and Processing of Materials ; 345-375

NATO ASI Series ; 176

Erscheinungsdatum:

01.01.1990

Format / Umfang:

31 pages

ISBN:

978-94-009-1946-4 , 978-94-010-7369-1

ISSN:

DOI:

https://doi.org/10.1007/978-94-009-1946-4_27

Medientyp:

Aufsatz/Kapitel (Buch)

Format:

Elektronische Ressource

Sprache:

Englisch

Schlagwörter:

Glow Discharge , Etch Rate , Plasma Etching , Pattern Transfer , Anisotropic Etching Chemistry , Industrial Chemistry/Chemical Engineering , Characterization and Evaluation of Materials , Nuclear Physics, Heavy Ions, Hadrons , Physical Chemistry

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