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Design of Low-Power CMOS VCO with Three Transistors NAND Gate and MOS Varactor
https://orcid.org/http://orcid.org/0000-0002-1863-4189
A low-power VCO circuit design with varying NMOS load and 3-transistors NAND gate and is presented. VCO circuit is designed with 180 nm gate length. Tuning of the output frequency is controlled by deviation in voltage (VCT) from 1.8 to 2.7 V. Additionally, a change in output frequency is achieved with the change in reverse bias (VSB) and drain-source biasing (VTune) of NMOS load. Three-stages VCO with power supply and drain-source voltage tuning of NMOS varactor provides frequency from 1.308 to 1.891 GHz with circuit power varying from 0.390 to 1.573 mW. By utilizing the substrate tuning of NMOS varactor load, the circuit gives frequency varying from 1.308 to 1.808 GHz. Frequency changes from 1.308 to 1.564 GHz have been obtained by changing the reverse bias of NMOS load with different source/drain biasing. The tuning range of 36, 32, and 18% has been obtained. VCO provides a phase noise of −94.33 dBc/Hz @1 MHz and figure of merit (FoM) for the VCO is 160.74 dBc/Hz. The reported VCO circuit provides an improved output frequency range with reduced power consumption.
Design of Low-Power CMOS VCO with Three Transistors NAND Gate and MOS Varactor
https://orcid.org/http://orcid.org/0000-0002-1863-4189
A low-power VCO circuit design with varying NMOS load and 3-transistors NAND gate and is presented. VCO circuit is designed with 180 nm gate length. Tuning of the output frequency is controlled by deviation in voltage (VCT) from 1.8 to 2.7 V. Additionally, a change in output frequency is achieved with the change in reverse bias (VSB) and drain-source biasing (VTune) of NMOS load. Three-stages VCO with power supply and drain-source voltage tuning of NMOS varactor provides frequency from 1.308 to 1.891 GHz with circuit power varying from 0.390 to 1.573 mW. By utilizing the substrate tuning of NMOS varactor load, the circuit gives frequency varying from 1.308 to 1.808 GHz. Frequency changes from 1.308 to 1.564 GHz have been obtained by changing the reverse bias of NMOS load with different source/drain biasing. The tuning range of 36, 32, and 18% has been obtained. VCO provides a phase noise of −94.33 dBc/Hz @1 MHz and figure of merit (FoM) for the VCO is 160.74 dBc/Hz. The reported VCO circuit provides an improved output frequency range with reduced power consumption.
Design of Low-Power CMOS VCO with Three Transistors NAND Gate and MOS Varactor
https://orcid.org/http://orcid.org/0000-0002-1863-4189
A low-power VCO circuit design with varying NMOS load and 3-transistors NAND gate and is presented. VCO circuit is designed with 180 nm gate length. Tuning of the output frequency is controlled by deviation in voltage (VCT) from 1.8 to 2.7 V. Additionally, a change in output frequency is achieved with the change in reverse bias (VSB) and drain-source biasing (VTune) of NMOS load. Three-stages VCO with power supply and drain-source voltage tuning of NMOS varactor provides frequency from 1.308 to 1.891 GHz with circuit power varying from 0.390 to 1.573 mW. By utilizing the substrate tuning of NMOS varactor load, the circuit gives frequency varying from 1.308 to 1.808 GHz. Frequency changes from 1.308 to 1.564 GHz have been obtained by changing the reverse bias of NMOS load with different source/drain biasing. The tuning range of 36, 32, and 18% has been obtained. VCO provides a phase noise of −94.33 dBc/Hz @1 MHz and figure of merit (FoM) for the VCO is 160.74 dBc/Hz. The reported VCO circuit provides an improved output frequency range with reduced power consumption.
Design of Low-Power CMOS VCO with Three Transistors NAND Gate and MOS Varactor
J. Inst. Eng. India Ser. B
Kumar, Manoj (Autor:in)
Journal of The Institution of Engineers (India): Series B ; 104 ; 851-858
01.08.2023
8 pages
Aufsatz (Zeitschrift)
Elektronische Ressource
Englisch
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