Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Single‐Crystalline β‐Ga2O3 Homoepitaxy on a Near Van der Waals Surface of (100) Substrate
https://orcid.org/0000-0002-7965-4407
AbstractGallium oxide (Ga₂O₃) is a promising wide‐bandgap semiconductor for power devices, offering high breakdown voltage and low on‐resistance. Among its polymorphs, β‐Ga₂O₃ stands out due to the availability of high‐quality, large‐area single‐crystalline substrates, particularly on the (100) surface, grown via melt‐based bulk crystal growth. However, the low surface energy of β‐Ga₂O₃ (100), akin to 2D materials, presents challenges in homoepitaxy, including poor nucleation and twin formation, which hinder its practical application. This study demonstrates the successful homoepitaxial growth of single‐crystalline β‐Ga₂O₃ on (100) substrates using a van der Waals epitaxial approach. By introducing an excess surfactant metal in metal‐rich conditions at high temperature, a growth regime approximate thermal equilibrium is achieved, enhancing adatom diffusion and suppressing metastable twin phases. This adjustment enables the formation of well‐ordered, single‐crystalline nuclei and lateral stitching in a half‐layer‐by‐half‐layer growth mode, similar to 2D material growth. The result is twin‐free, atomically flat, single‐crystal thin films on on‐axis β‐Ga₂O₃ (100) substrates. These findings significantly improve the crystalline quality of epitaxial β‐Ga₂O₃ on (100) substrates, demonstrating their potential for scalable production of high‐performance, cost‐effective β‐Ga₂O₃‐based power devices, and advancing their feasibility for industrial applications.
Single‐Crystalline β‐Ga2O3 Homoepitaxy on a Near Van der Waals Surface of (100) Substrate
https://orcid.org/0000-0002-7965-4407
AbstractGallium oxide (Ga₂O₃) is a promising wide‐bandgap semiconductor for power devices, offering high breakdown voltage and low on‐resistance. Among its polymorphs, β‐Ga₂O₃ stands out due to the availability of high‐quality, large‐area single‐crystalline substrates, particularly on the (100) surface, grown via melt‐based bulk crystal growth. However, the low surface energy of β‐Ga₂O₃ (100), akin to 2D materials, presents challenges in homoepitaxy, including poor nucleation and twin formation, which hinder its practical application. This study demonstrates the successful homoepitaxial growth of single‐crystalline β‐Ga₂O₃ on (100) substrates using a van der Waals epitaxial approach. By introducing an excess surfactant metal in metal‐rich conditions at high temperature, a growth regime approximate thermal equilibrium is achieved, enhancing adatom diffusion and suppressing metastable twin phases. This adjustment enables the formation of well‐ordered, single‐crystalline nuclei and lateral stitching in a half‐layer‐by‐half‐layer growth mode, similar to 2D material growth. The result is twin‐free, atomically flat, single‐crystal thin films on on‐axis β‐Ga₂O₃ (100) substrates. These findings significantly improve the crystalline quality of epitaxial β‐Ga₂O₃ on (100) substrates, demonstrating their potential for scalable production of high‐performance, cost‐effective β‐Ga₂O₃‐based power devices, and advancing their feasibility for industrial applications.
Single‐Crystalline β‐Ga2O3 Homoepitaxy on a Near Van der Waals Surface of (100) Substrate
https://orcid.org/0000-0002-7965-4407
AbstractGallium oxide (Ga₂O₃) is a promising wide‐bandgap semiconductor for power devices, offering high breakdown voltage and low on‐resistance. Among its polymorphs, β‐Ga₂O₃ stands out due to the availability of high‐quality, large‐area single‐crystalline substrates, particularly on the (100) surface, grown via melt‐based bulk crystal growth. However, the low surface energy of β‐Ga₂O₃ (100), akin to 2D materials, presents challenges in homoepitaxy, including poor nucleation and twin formation, which hinder its practical application. This study demonstrates the successful homoepitaxial growth of single‐crystalline β‐Ga₂O₃ on (100) substrates using a van der Waals epitaxial approach. By introducing an excess surfactant metal in metal‐rich conditions at high temperature, a growth regime approximate thermal equilibrium is achieved, enhancing adatom diffusion and suppressing metastable twin phases. This adjustment enables the formation of well‐ordered, single‐crystalline nuclei and lateral stitching in a half‐layer‐by‐half‐layer growth mode, similar to 2D material growth. The result is twin‐free, atomically flat, single‐crystal thin films on on‐axis β‐Ga₂O₃ (100) substrates. These findings significantly improve the crystalline quality of epitaxial β‐Ga₂O₃ on (100) substrates, demonstrating their potential for scalable production of high‐performance, cost‐effective β‐Ga₂O₃‐based power devices, and advancing their feasibility for industrial applications.
Single‐Crystalline β‐Ga2O3 Homoepitaxy on a Near Van der Waals Surface of (100) Substrate
Advanced Science
Jiang, Tong (Autor:in) / Wang, Hao (Autor:in) / Zhu, Huaze (Autor:in) / Cao, Junwei (Autor:in) / Huo, Xiaoqing (Autor:in) / Yang, Zhiqing (Autor:in) / Li, Junshuai (Autor:in) / Ma, Yaqing (Autor:in) / Zhang, Shengnan (Autor:in) / Xu, Xiang (Autor:in)
08.03.2025
Aufsatz (Zeitschrift)
Elektronische Ressource
Englisch
Substrate polarity and surface pretreatment temperature dependence of ZnO homoepitaxy
| British Library Online Contents | 2016
Homoepitaxy of Silicon Carbide Using the Single Precursor 1,3-Disilabutane
| British Library Online Contents | 2000
Single crystalline beta -Ga2O3 nanowires synthesized by thermal oxidation of GaSe layer
| British Library Online Contents | 2013
An Atomistic View of Si(001) Homoepitaxy
| British Library Online Contents | 1997
Kinetic surface structuring during homoepitaxy of GaAs (110): a model study
| British Library Online Contents | 2001