:Hydrogen Doping Oxide Transistors: Analysis of Ultrahigh Apparent Mobility in Oxide Field‐Effect Transistors (Adv. Sci. 7/2019): Fid-Bau Portal

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:Hydrogen Doping Oxide Transistors: Analysis of Ultrahigh Apparent Mobility in Oxide Field‐Effect Transistors (Adv. Sci. 7/2019)

Chen, Changdong / Yang, Bo‐Ru / Li, Gongtan / Zhou, Hang / Huang, Bolong / Wu, Qian / Zhan, Runze / Noh, Yong‐Young / Minari, Takeo / Zhang, Shengdong / ... [more]

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:Hydrogen Doping Oxide Transistors: Analysis of Ultrahigh Apparent Mobility in Oxide Field‐Effect Transistors (Adv. Sci. 7/2019)

Chen, Changdong / Yang, Bo‐Ru / Li, Gongtan / Zhou, Hang / Huang, Bolong / Wu, Qian / Zhan, Runze / Noh, Yong‐Young / Minari, Takeo / Zhang, Shengdong / ... [more]

:Hydrogen Doping Oxide Transistors: Analysis of Ultrahigh Apparent Mobility in Oxide Field‐Effect Transistors (Adv. Sci. 7/2019)

Chen, Changdong / Yang, Bo‐Ru / Li, Gongtan / Zhou, Hang / Huang, Bolong / Wu, Qian / Zhan, Runze / Noh, Yong‐Young / Minari, Takeo / Zhang, Shengdong / ... [more]

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Title:

:Hydrogen Doping Oxide Transistors: Analysis of Ultrahigh Apparent Mobility in Oxide Field‐Effect Transistors (Adv. Sci. 7/2019)

Contributors:

Chen, Changdong (author) / Yang, Bo‐Ru (author) / Li, Gongtan (author) / Zhou, Hang (author) / Huang, Bolong (author) / Wu, Qian (author) / Zhan, Runze (author) / Noh, Yong‐Young (author) / Minari, Takeo (author) / Zhang, Shengdong (author)

Published in:

Advanced Science ; 6

Publication date:

2019-04-01

Size:

1 pages

ISSN:

DOI:

https://doi.org/10.1002/advs.201970040

Type of media:

Article (Journal)

Type of material:

Electronic Resource

Language:

English

Keywords:

carrier mobility , four‐probe measurement , surface potential scanning , doping , thin‐film transistors

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