TEM characterization of the GaP/Si interface grown by MOCVD: Fid-Bau Portal

TEM characterization of the GaP/Si interface grown by MOCVD

Soga, T. / Jiang, Z. K. / Suzuki, T. / Jimbo, T.

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TEM characterization of the GaP/Si interface grown by MOCVD

Soga, T. / Jiang, Z. K. / Suzuki, T. / Jimbo, T.

TEM characterization of the GaP/Si interface grown by MOCVD

Soga, T. / Jiang, Z. K. / Suzuki, T. / Jimbo, T.

Access

Access via TIB

Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

TEM characterization of the GaP/Si interface grown by MOCVD

Contributors:

Soga, T. (author) / Jiang, Z. K. (author) / Suzuki, T. (author) / Jimbo, T. (author)

Published in:

APPLIED SURFACE SCIENCE ; 60 ; 380

Publication date:

1992-01-01

Size:

380 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

Unknown

Classification:

DDC: 621.35

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