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    Characterization of MOCVD-grown GaAs on Si by spectroscopic ellipsometry

    New search for: Yu, G.
    New search for: Soga, T.
    New search for: Jimbo, T.
    New search for: Umeno, M.
    New search for: Feldman, L. C.
    New search for: Nishizawa, J.
    New search for: Van der Weg, W. F.

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    Characterization of MOCVD-grown GaAs on Si by spectroscopic ellipsometry

    New search for: Yu, G.
    New search for: Soga, T.
    New search for: Jimbo, T.
    New search for: Umeno, M.
    New search for: Feldman, L. C.
    New search for: Nishizawa, J.
    New search for: Van der Weg, W. F.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Characterization of MOCVD-grown GaAs on Si by spectroscopic ellipsometry

    New search for: Yu, G.
    New search for: Soga, T.
    New search for: Jimbo, T.
    New search for: Umeno, M.
    New search for: Feldman, L. C.
    New search for: Nishizawa, J.
    New search for: Van der Weg, W. F.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

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    Document information
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    Document information
    Title:

    Characterization of MOCVD-grown GaAs on Si by spectroscopic ellipsometry

    Contributors:

    Yu, G. (author) / Soga, T. (author) / Jimbo, T. (author) / Umeno, M. (author) / Feldman, L. C. / Nishizawa, J. / Van der Weg, W. F.

    Published in:

    A journal devoted to applied physics and chemistry of surfaces and interfaces ; 617-620

    APPLIED SURFACE SCIENCE ; 100/101

    Publication date:

    1996-01-01

    Size:

    4 pages

    ISSN:

    0169-4332

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  621.35

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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