Measurement of Interstitial Oxygen Striations in Silicon Single Crystals Using the Micro-FTIR Method: Fid-Bau Portal

Measurement of Interstitial Oxygen Striations in Silicon Single Crystals Using the Micro-FTIR Method

Iino, E. / Fusegawa, I. / Yamagishi, H.

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Measurement of Interstitial Oxygen Striations in Silicon Single Crystals Using the Micro-FTIR Method

Iino, E. / Fusegawa, I. / Yamagishi, H.

Measurement of Interstitial Oxygen Striations in Silicon Single Crystals Using the Micro-FTIR Method

Iino, E. / Fusegawa, I. / Yamagishi, H.

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Access via TIB

Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

Measurement of Interstitial Oxygen Striations in Silicon Single Crystals Using the Micro-FTIR Method

Contributors:

Iino, E. (author) / Fusegawa, I. (author) / Yamagishi, H. (author) / Taguchi, T.

Published in:

Shallow Impurities in Semiconductors ; 189

MATERIALS SCIENCE FORUM

Publication date:

1993-01-01

Size:

189 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

Unknown

Classification:

DDC: 620.11

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