Characterization of striations in silicon wafers by a multipass Fabry-Perot Rayleigh-Brillouin scattering spectrometer: Fid-Bau Portal

Characterization of striations in silicon wafers by a multipass Fabry-Perot Rayleigh-Brillouin scattering spectrometer

Lu, T. / Ng, S. C.

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Characterization of striations in silicon wafers by a multipass Fabry-Perot Rayleigh-Brillouin scattering spectrometer

Lu, T. / Ng, S. C.

Characterization of striations in silicon wafers by a multipass Fabry-Perot Rayleigh-Brillouin scattering spectrometer

Lu, T. / Ng, S. C.

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Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

Characterization of striations in silicon wafers by a multipass Fabry-Perot Rayleigh-Brillouin scattering spectrometer

Contributors:

Lu, T. (author) / Ng, S. C. (author)

Published in:

JOURNAL OF MATERIALS RESEARCH -PITTSBURGH- ; 9 ; 2712

Publication date:

1994-01-01

Size:

2712 pages

ISSN:

0884-2914

Type of media:

Article (Journal)

Type of material:

Language:

Unknown

Classification:

DDC: 620.11

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