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    Impurities and Point Defects in GaAs and AlAs Grown by Atomic Layer Epitaxy

    New search for: Ikuta, K.
    New search for: Yokoyama, H.
    New search for: Inoue, N.
    New search for: Taguchi, T.

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    Impurities and Point Defects in GaAs and AlAs Grown by Atomic Layer Epitaxy

    New search for: Ikuta, K.
    New search for: Yokoyama, H.
    New search for: Inoue, N.
    New search for: Taguchi, T.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Impurities and Point Defects in GaAs and AlAs Grown by Atomic Layer Epitaxy

    New search for: Ikuta, K.
    New search for: Yokoyama, H.
    New search for: Inoue, N.
    New search for: Taguchi, T.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Document information
    Title:

    Impurities and Point Defects in GaAs and AlAs Grown by Atomic Layer Epitaxy

    Contributors:

    Ikuta, K. (author) / Yokoyama, H. (author) / Inoue, N. (author) / Taguchi, T.

    Published in:

    Shallow Impurities in Semiconductors ; 291

    MATERIALS SCIENCE FORUM

    Publication date:

    1993-01-01

    Size:

    291 pages

    ISSN:

    0255-5476

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    Unknown

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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