Monoenergetic Positron Beam Study of Heavily Si-doped GaAs Grown by MOCVD using Tertiarybutylarsine: Fid-Bau Portal

Monoenergetic Positron Beam Study of Heavily Si-doped GaAs Grown by MOCVD using Tertiarybutylarsine

Chichibu, S. / Iwai, A. / Nakahara, Y. / Matsumoto, S.

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Monoenergetic Positron Beam Study of Heavily Si-doped GaAs Grown by MOCVD using Tertiarybutylarsine

Chichibu, S. / Iwai, A. / Nakahara, Y. / Matsumoto, S.

Monoenergetic Positron Beam Study of Heavily Si-doped GaAs Grown by MOCVD using Tertiarybutylarsine

Chichibu, S. / Iwai, A. / Nakahara, Y. / Matsumoto, S.

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Check availability in my library

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Title:

Monoenergetic Positron Beam Study of Heavily Si-doped GaAs Grown by MOCVD using Tertiarybutylarsine

Contributors:

Chichibu, S. (author) / Iwai, A. (author) / Nakahara, Y. (author) / Matsumoto, S. (author) / Taguchi, T.

Published in:

Shallow Impurities in Semiconductors ; 315

MATERIALS SCIENCE FORUM

Publication date:

1993-01-01

Size:

315 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

Unknown

Classification:

DDC: 620.11

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